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1.发明授权Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US07390596B2
公开(公告)日：2008-06-24
申请号：US10510916
申请日：2003-04-11
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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2.发明授权Reflective mask blank, reflective mask and methods of producing the mask blank and the mask 有权反光面罩坯料，反光罩和生产面罩坯料和面膜的方法公开(公告)号：US07981573B2
公开(公告)日：2011-07-19
申请号：US12116550
申请日：2008-05-07
IPC分类号： G03F1/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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3.发明申请Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US20050208389A1
公开(公告)日：2005-09-22
申请号：US10510916
申请日：2003-04-11
IPC分类号： G03F1/52 , G03F1/00 , G03F1/50 , H01L21/027 , G03F9/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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4.发明申请Reflective Mask Blank, Reflective Mask and Methods of Producing the Mask Blank and the Mask 有权反光面罩空白，反光面膜及生产面膜和面膜的方法公开(公告)号：US20080248409A1
公开(公告)日：2008-10-09
申请号：US12116550
申请日：2008-05-07
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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公开(公告)号：US20140113020A1
公开(公告)日：2014-04-24
申请号：US14009206
申请日：2011-04-06
IPC分类号： B29C33/38
CPC分类号： B29C33/38 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855
摘要： A fine pattern is formed with high pattern precision, and a time required for fabricating a mold is considerably shortened. Provided are mask blanks used for manufacturing a sub-master mold by transferring the fine pattern provided on a surface of an original mold by imprint, having a hard mask layer including a chromium compound layer expressed by a chemical formula CrOxNyCz (x>0), on a substrate.
摘要翻译： 以高图案精度形成精细图案，并且显着缩短了制造模具所需的时间。 本发明提供一种用于制造子母模的掩模坯料，其通过印刷转印设置在原始模具的表面上的精细图案，具有由化学式CrOxNyCz（x> 0）表示的含有铬化合物层的硬掩模层， 在基板上。
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公开(公告)号：US20110002026A1
公开(公告)日：2011-01-06
申请号：US12882267
申请日：2010-09-15
IPC分类号： G02F1/01
CPC分类号： G02B5/3058
摘要： Disclosed is a polarization element which, by utilizing the fact that the plasmon resonance frequency of a metal piece varies according to the polarization direction of a light irradiated on the metal piece, is constituted by a polarizer comprising such an aggregate of metal pieces that the plasmon resonance frequency in a predetermined direction of a metal piece is substantially equal to the frequency of light irradiated on a polarization element, and the real part and the imaginary part of permittivity at the plasmon resonance frequency of a metal material constituting the metal piece and the refractive index (na) of a dielectric layer satisfy a particular relation.
摘要翻译： 公开了一种偏振元件，其通过利用金属片的等离子体共振频率根据照射在金属片上的光的偏振方向而变化的事实由包括这样的金属片状聚集体的偏振片构成，该等离子体激元 在金属片的预定方向上的共振频率基本上等于照射在偏振元件上的光的频率，构成金属片的金属材料的等离子体共振频率处的介电常数的实部和虚部与折射率 介电层的折射率（na）满足特定的关系。
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公开(公告)号：US08273505B2
公开(公告)日：2012-09-25
申请号：US12680355
申请日：2008-09-26
申请人： Takashi Sato , Mitsuhiro Kureishi
发明人： Takashi Sato , Mitsuhiro Kureishi
IPC分类号： G03F1/22
CPC分类号： G03F7/0002 , B81C99/009 , B82Y10/00 , B82Y40/00
摘要： Provided is a method of manufacturing an imprint mold formed with a highly accurate fine pattern by the use of a mask blank.In a mask blank having a thin film for forming a pattern on a transparent substrate, the thin film comprises an upper layer formed of a material containing Cr and nitrogen and a lower layer formed of a material containing a compound mainly composed of Ta and capable of being etched by dry etching using a chlorine-based gas. The upper layer and the lower layer of the thin film are etched by dry etching using a chlorine-based gas substantially free of oxygen and then the substrate is etched by dry etching using a fluorine-based gas, thereby obtaining an imprint mold.
摘要翻译： 提供了通过使用掩模坯料来制造形成有高精度精细图案的压印模具的方法。 在具有用于在透明基板上形成图案的薄膜的掩模坯料中，薄膜包括由含有Cr和氮的材料形成的上层和由含有主要由Ta组成的化合物的材料形成的下层，并且能够 通过使用氯基气体的干蚀刻蚀刻。 通过使用基本上不含氧的氯系气体的干蚀刻来蚀刻薄膜的上层和下层，然后通过使用氟基气体的干法蚀刻来蚀刻基板，从而获得压印模具。
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8.发明申请公开(公告)号：US20080206655A1
公开(公告)日：2008-08-28
申请号：US12038826
申请日：2008-02-28
申请人： Osamu Nozawa , Mitsuhiro Kureishi
发明人： Osamu Nozawa , Mitsuhiro Kureishi
IPC分类号： G03F1/14
摘要： A mask blank includes a substrate and a thin film formed thereon and used to form a pattern. The mask blank is adapted to be subjected to dry etching corresponding to a method of producing an exposure mask by patterning the thin film by dry etching using an etching gas substantially free from oxygen with a resist pattern formed on the thin film used as a mask. The thin film has a protective layer formed at least at its upper layer and containing 60 atomic % or more oxygen. For example, the dry etching is performed by the use of a chlorine-based gas substantially free from oxygen.
摘要翻译： 掩模坯料包括基板和形成在其上的薄膜并用于形成图案。 通过使用基本上不含氧的蚀刻气体通过干蚀刻对薄膜进行图案化，对掩膜坯料进行干蚀刻，形成在用作掩模的薄膜上的抗蚀剂图案。 薄膜具有至少在其上层形成且含有60原子％以上的氧的保护层。 例如，通过使用基本上不含氧的氯系气体进行干蚀刻。
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9.发明申请Photomask Blank, Photomask, and Pattern Transfer Method Using Photomask 审中-公开光掩模空白，光掩模和使用光掩模的图案传输方法公开(公告)号：US20120034553A1
公开(公告)日：2012-02-09
申请号：US13272988
申请日：2011-10-13
申请人： Mitsuhiro Kureishi , Hideaki Mitsui
发明人： Mitsuhiro Kureishi , Hideaki Mitsui
摘要： A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).
摘要翻译： 公开了适合于缩短曝光波长的低反射光掩模坯料。 具有设置在半透明基板（2）上并主要包含金属的单层或多层遮光膜（3）的光掩模坯料（1）的特征在于包括至少含有硅的抗反射膜（6） 氧和/或氮，在遮光膜（3）上。
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10.发明申请Photomask blank, photomask, and pattern transfer method using photomask 审中-公开光掩模坯料，光掩模和使用光掩模的图案转印方法公开(公告)号：US20060057469A1
公开(公告)日：2006-03-16
申请号：US10543467
申请日：2004-02-02
申请人： Mitsuhiro Kureishi , Hideoki Mitsui
发明人： Mitsuhiro Kureishi , Hideoki Mitsui
IPC分类号： G03F1/00
摘要： A low reflective photomask blank suitable for shortened exposure wavelengths is disclosed. A photomask blank (1) having a single-layer or multilayer light-shielding film (3) arranged on a translucent substrate (2) and mainly containing a metal is characterized by comprising an antireflective film (6), which at least contains silicon and oxygen and/or nitrogen, on the light-shielding film (3).
摘要翻译： 公开了适合于缩短曝光波长的低反射光掩模坯料。 具有设置在半透明基板（2）上并主要包含金属的单层或多层遮光膜（3）的光掩模坯料（1）的特征在于包括至少含有硅的抗反射膜（6） 氧和/或氮，在遮光膜（3）上。
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