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1.发明授权Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US07390596B2
公开(公告)日：2008-06-24
申请号：US10510916
申请日：2003-04-11
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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2.发明授权Reflective mask blank, reflective mask and methods of producing the mask blank and the mask 有权反光面罩坯料，反光罩和生产面罩坯料和面膜的方法公开(公告)号：US07981573B2
公开(公告)日：2011-07-19
申请号：US12116550
申请日：2008-05-07
IPC分类号： G03F1/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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3.发明申请Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US20050208389A1
公开(公告)日：2005-09-22
申请号：US10510916
申请日：2003-04-11
IPC分类号： G03F1/52 , G03F1/00 , G03F1/50 , H01L21/027 , G03F9/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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4.发明申请Reflective Mask Blank, Reflective Mask and Methods of Producing the Mask Blank and the Mask 有权反光面罩空白，反光面膜及生产面膜和面膜的方法公开(公告)号：US20080248409A1
公开(公告)日：2008-10-09
申请号：US12116550
申请日：2008-05-07
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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5.发明授权Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film 有权光学半透射膜，光掩模坯料和光掩模，以及用于设计光学半透射膜的方法公开(公告)号：US07651823B2
公开(公告)日：2010-01-26
申请号：US11629210
申请日：2005-06-10
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
IPC分类号： G03F1/00
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译： 本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。 该薄膜形成在透光性基板上并透过一部分具有所需波长λ的光，其中该薄膜具有至少一个能够实现以下功能的相差减小层。 具体地说，相位差降低层是折射率n和厚度d满足表达式0
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公开(公告)号：US07060394B2
公开(公告)日：2006-06-13
申请号：US10107825
申请日：2002-03-28
申请人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui
发明人： Yuki Shiota , Osamu Nozawa , Hideaki Mitsui
IPC分类号： G01F9/00
摘要： A halftone phase-shift mask blank, in which the phase shifter film is composed of two layers, a low-transmission layer having a principal function of transmittance control, and a high-transmission layer having a principal function of phase shift control, the extinction coefficient K1 of the low-transmission layer and the extinction coefficient K2 of the high-transmission layer satisfy K2
摘要翻译： 半色调相移掩模空白，其中移相器膜由两层组成，具有透射控制主要功能的低透射层和具有相移控制的主要功能的高透射层，消光 高透射层的低透射层的系数K L1和消光系数K 2 <2>满足K <2 < 在140nm和200nm之间的曝光波长λ1处，低透射层的厚度d 1 <1> 1 <1 <3，满足0.001 <= K 1 < 在曝光波长λ下，λ> 1/1 /λ<= 0.500。
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7.发明授权Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film 有权光学半透射膜，光掩模坯料和光掩模，以及用于设计光学半透射膜的方法公开(公告)号：US08486588B2
公开(公告)日：2013-07-16
申请号：US13340228
申请日：2011-12-29
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
摘要： A photomask blank includes a transparent substrate and a film containing at least two layers having at least a first layer and a second layer formed on the transparent substrate. The first layer is made of a material containing one or more materials selected from the group Ta, Hf, Si, Cr, Ag, Au, Cu, Al, and Mo. The second layer is made of MoSiN, MoSiO, MoSiON, SiN, SiO, or SiON. A phase difference of the film containing at least two layers is from −30° to +30°.
摘要翻译： 光掩模坯料包括透明基板和含有至少两层至少具有形成在透明基板上的第一层和第二层的膜。 第一层由含有选自Ta，Hf，Si，Cr，Ag，Au，Cu，Al和Mo中的一种或多种材料的材料制成。第二层由MoSiN，MoSiO，MoSiON，SiN， SiO或SiON。 含有至少两层的膜的相位差为-30°〜+ 30°。
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8.发明授权Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film 有权光学半透射膜，光掩模坯料和光掩模，以及用于设计光学半透射膜的方法公开(公告)号：US07955762B2
公开(公告)日：2011-06-07
申请号：US12632103
申请日：2009-12-07
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译： 本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可以[用于]制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。 膜形成在透光性基板上，透过具有期望波长λ的光的一部分，其中，膜具有满足以下功能的至少一个相位差减少层。 具体地说，相位差减少层是折射率n和厚度d满足表达式0
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9.发明授权Mask blank substrate manufacturing method, and reflective mask blank manufacturing method 有权掩模空白基板制造方法和反光掩模板制造方法公开(公告)号：US08252488B2
公开(公告)日：2012-08-28
申请号：US12604991
申请日：2009-10-23
申请人： Yuki Shiota
发明人： Yuki Shiota
IPC分类号： G03F1/00
摘要： Provided is a mask blank substrate manufacturing method in which a low thermal expansion glass substrate containing titanium (Ti) oxide is polished using a polishing agent, then treated using an aqueous solution containing hydrofluoric acid, then cleaned using an acidic solution with a pH of 4 or less, and then further cleaned using an alkaline solution.
摘要翻译： 提供了一种掩模空白基板的制造方法，其中使用抛光剂对包含钛（Ti）氧化物的低热膨胀玻璃基板进行抛光，然后使用含有氢氟酸的水溶液进行处理，然后使用pH为4的酸性溶液 或更少，然后使用碱性溶液进一步清洁。
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10.发明申请Optically Semitransmissive Film, Photomask Blank and Photomask, and Method for Designing Optically Semitransmissive Film 有权光学半透射膜，光掩模空白和光掩模，以及设计光学半透射膜的方法公开(公告)号：US20070269723A1
公开(公告)日：2007-11-22
申请号：US11629210
申请日：2005-06-10
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译： 本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。 该薄膜形成在透光性基板上并透过一部分具有所需波长λ的光，其中该薄膜具有至少一个能够实现以下功能的相差减小层。 具体地说，相位差降低层是折射率n和厚度d满足表达式0
单位：度）），其基于层透射光和层参考光之间的光学距离的差异计算。
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