公开(公告)号：US20150144393A1

公开(公告)日：2015-05-28

申请号：US14611535

申请日：2015-02-02

Applicant: NEC Corporation

Inventor： Hiroshi TOYAO ,  Naoki KOBAYASHI ,  Noriaki ANDO

IPC: H05K1/02 ,  H05K1/11

CPC classification number: H05K1/0236 ,  H01P3/00 ,  H05K1/024 ,  H05K1/0298 ,  H05K1/115 ,  Y10T29/49165

Abstract: A structure (10) includes at least three conductors (111, 131, 151) that are opposed to each other, a penetration via (101) that penetrates the conductors (111, 131, 151), openings (112, 152) that are formed so as to surround the penetration via (101), and conductor elements (121, 141) that are located in layers other than the layers in which the conductors (111, 131, 151) are located and that are connected to the penetration via (101). The conductor element (121) larger than the opening (112) is opposed to the opening (112) and the conductor element (141) larger than the opening (152) is opposed to the opening (152).

Abstract translation: 结构（10）包括彼此相对的至少三个导体（111,131,151），穿过导体（111,131,151）的穿透通孔（101），开口（112,152） 形成为围绕穿过通孔（101）的穿透通道以及导体元件（121,141），导体元件（121,141）位于除了导体（111,131,151）所在的层之外的层中，并且连接到穿透通孔 （101）。 大于开口（112）的导体元件（121）与开口（112）相对，并且比开口（152）大的导体元件（141）与开口（152）相对。