SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    11.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20140103379A1

    公开(公告)日:2014-04-17

    申请号:US14054868

    申请日:2013-10-16

    Abstract: The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.

    Abstract translation: 本发明提供了在半透明基板的主表面上具有半导体层的半导体发光器件和与具有半导体层的主表面相对的第二主表面上的反射层,其能够使反射层从 透光性基板被抑制。 半导体发光器件包括与透光性基板的第二主面接触配置的第一金属层,与第一金属的至少第二主面或半透明基板的侧面相接触地设置的第二金属层 层和设置在第二金属层上的第三金属层。 第一金属层相对于从发光层发射的光的峰值波长的反射率高于第二金属层的反射率。 第二金属层相对于透光性基板具有比第一金属层和透光性基板之间的粘合性高的粘接性。

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