公开(公告)号：US20150236090A1

公开(公告)日：2015-08-20

申请号：US14180418

申请日：2014-02-14

Applicant: NXP B.V.

Inventor： Hans-Martin Ritter

IPC: H01L29/06 ,  H01L21/761

CPC classification number: H01L29/0646 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0823 ,  H01L27/0921 ,  H01L29/1008 ,  H01L29/1079 ,  H01L29/735

Abstract: Parasitic thyristor action may be mitigated in semiconductor devices by placement of minority carrier traps, illustratively in the base(s) of bipolar transistors or the well of a CMOS transistor pair. The minority carrier traps include adjacent n and p regions which may be connected by a conductor.

Abstract translation: 寄生晶闸管的作用可以通过放置少数载流子陷阱在半导体器件中得到缓解，例如在双极晶体管的基极或CMOS晶体管对的阱中。 少数载流子陷阱包括可由导体连接的相邻的n和p区。