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公开(公告)号：US11965787B2
公开(公告)日：2024-04-23
申请号：US17860941
申请日：2022-07-08
Applicant: NextInput, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
CPC classification number: G01L1/18 , B81B3/0021 , B81C1/00595 , G01L1/26 , B81B2203/0127 , B81C2201/014
Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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公开(公告)号：US11754451B2
公开(公告)日：2023-09-12
申请号：US18081255
申请日：2022-12-14
Applicant: NEXTINPUT, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
CPC classification number: G01L1/16 , G01L1/18 , G01L5/0028 , B81B3/0072
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US20230184601A1
公开(公告)日：2023-06-15
申请号：US18081255
申请日：2022-12-14
Applicant: NEXTINPUT, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
CPC classification number: G01L1/16 , G01L1/18 , G01L5/0028 , B81B3/0072
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US11385108B2
公开(公告)日：2022-07-12
申请号：US16761373
申请日：2018-11-02
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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公开(公告)号：US20200024126A1
公开(公告)日：2020-01-23
申请号：US16254968
申请日：2019-01-23
Applicant: NextInput, Inc.
Inventor： Amnon Brosh , Ryan Diestelhorst , Steven Nasiri
Abstract: Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.
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Patent Agency Ranking
公开(公告)号：US20170299448A1
公开(公告)日：2017-10-19
申请号：US15486632
申请日：2017-04-13
Applicant: NextInput, Inc.
Inventor： Ian Campbell , Ryan Diestelhorst , Jeremy Crank
CPC classification number: G01L1/04 , G01L1/044 , G01L1/26 , G06F3/041 , G06F2203/04103 , G06F2203/04105
Abstract: An example actuator device for a force sensor is described herein. The device can include a device body, a force concentrator element, an overload protection element, one or more legs, and an attachment layer for attaching the device to a substrate. An example method for assembling a force sensing system is also described herein. Further, an example method for protecting a force sensor from excessive forces or displacement is described herein.
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公开(公告)号：US11604104B2
公开(公告)日：2023-03-14
申请号：US17591715
申请日：2022-02-03
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US20220260436A1
公开(公告)日：2022-08-18
申请号：US17591715
申请日：2022-02-03
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US11243125B2
公开(公告)日：2022-02-08
申请号：US16485026
申请日：2018-02-09
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US10466119B2
公开(公告)日：2019-11-05
申请号：US15178976
申请日：2016-06-10
Applicant: NextInput, Inc.
Inventor： Ian Campbell , Ryan Diestelhorst , Dan Benjamin , Steven S. Nasiri
Abstract: An example MEMS force sensor is described herein. The MEMS force sensor can include a cap for receiving an applied force and a sensor bonded to the cap. A trench and a cavity can be formed in the sensor. The trench can be formed along at least a portion of a peripheral edge of the sensor. The cavity can define an outer wall and a flexible sensing element, and the outer wall can be arranged between the trench and the cavity. The cavity can be sealed between the cap and the sensor. The sensor can also include a sensor element formed on the flexible sensing element. The sensor element can change an electrical characteristic in response to deflection of the flexible sensing element.
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