公开(公告)号：US11155931B2

公开(公告)日：2021-10-26

申请号：US16776647

申请日：2020-01-30

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US10260165B2

公开(公告)日：2019-04-16

申请号：US15398319

申请日：2017-01-04

Applicant: OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B25/18 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

公开(公告)号：US11753739B2

公开(公告)日：2023-09-12

申请号：US17479516

申请日：2021-09-20

Applicant: OSAKA UNIVERSITY ,  PANASONIC HOLDINGS CORPORATION

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

CPC classification number: C30B25/165 ,  C30B29/403

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US11220759B2

公开(公告)日：2022-01-11

申请号：US16783229

申请日：2020-02-06

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yoshio Okayama

IPC: C30B19/10 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US10927476B2

公开(公告)日：2021-02-23

申请号：US16243321

申请日：2019-01-09

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Yoshio Okayama

IPC: C30B9/02 ,  C30B19/02 ,  C30B19/10 ,  C30B29/40

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

公开(公告)号：US10309036B2

公开(公告)日：2019-06-04

申请号：US15555004

申请日：2016-02-18

Applicant: OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B23/02 ,  C30B19/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02

Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.