公开(公告)号：US20180241178A1

公开(公告)日：2018-08-23

申请号：US15902045

申请日：2018-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Bachmann ,  Volker Grossmann

IPC: H01S5/32 ,  H01S5/22 ,  B82Y20/00

CPC classification number: H01S5/3201 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3403 ,  H01S5/4031 ,  H01S2301/176 ,  H01S2301/18

Abstract: A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

公开(公告)号：US20140334508A1

公开(公告)日：2014-11-13

申请号：US14361647

申请日：2012-11-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Lauer ,  Harald König ,  Uwe Strauß ,  Alexander Bachmann

IPC: H01S5/024 ,  H01S5/10

CPC classification number: H01S5/02469 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2036 ,  H01S5/2054

Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence

Abstract translation: 提供半导体激光二极管。 半导体层序列具有垂直一个地上下延伸的半导体层。 活性层包括具有大于或等于30μm的宽度的有源区，其通过辐射耦合出表面在操作期间发射激光辐射。 辐射耦合出表面由半导体层序列的侧表面形成，并且在相反的后表面形成在纵向上具有横向增益引导的谐振器。 由于操作，半导体层序列在影响的热区域被加热。 金属化层与半导体层序列的顶侧直接接触