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公开(公告)号：US20170098919A1
公开(公告)日：2017-04-06
申请号：US15381271
申请日：2016-12-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Alvaro Gomez-Iglesias
CPC classification number: H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
Abstract: A laser system includes an edge emitting semiconductor laser, and an optical fiber, wherein the laser emits one or more laser beams coupled into the optical fiber and the laser includes a semiconductor body including a waveguide region that includes first and second waveguide layers and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region, a phase structure is formed in the semiconductor body, includes a cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer composed of a semiconductor material different from the material of the second cladding layer is embedded therein, and the cutout extends from the top side of the semiconductor body at least partly into the first intermediate layer.
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公开(公告)号：US20160141837A1
公开(公告)日：2016-05-19
申请号：US14895542
申请日：2014-06-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Alvaro Gomez-Iglesias , Harald König , Christian Lauer
IPC: H01S5/20
CPC classification number: H01S5/2031 , H01S5/1014 , H01S5/1082 , H01S5/209 , H01S5/3213 , H01S2301/18
Abstract: An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.
Abstract translation: 边缘发射半导体激光器包括具有具有有源层的波导层的半导体结构，该波导层在半导体结构的第一和第二侧面之间沿纵向方向延伸，该半导体结构具有与第一侧相邻的锥形区域 锥形区域中的波导层的厚度纵向增加，波导层布置在第一和第二包层之间，半导体结构的锥形区域中的第二包层的厚度纵向增加，锥形区域包括第一 和第二子区域，第一子区域布置成比第二子区域更靠近第一侧面，波导层的厚度在第一子区域中纵向增加，波导层的厚度在第二子区域中的纵向方向上是恒定的，并且厚度 的第二包层增加了纵向 在第二个次区域内。
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公开(公告)号：US09812844B2
公开(公告)日：2017-11-07
申请号：US14895542
申请日：2014-06-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro Gomez-Iglesias , Harald König , Christian Lauer
CPC classification number: H01S5/2031 , H01S5/1014 , H01S5/1082 , H01S5/209 , H01S5/3213 , H01S2301/18
Abstract: An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.
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公开(公告)号：US20140334508A1
公开(公告)日：2014-11-13
申请号：US14361647
申请日：2012-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Harald König , Uwe Strauß , Alexander Bachmann
CPC classification number: H01S5/02469 , H01S5/0224 , H01S5/024 , H01S5/02461 , H01S5/0425 , H01S5/10 , H01S5/1064 , H01S5/2036 , H01S5/2054
Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence
Abstract translation: 提供半导体激光二极管。 半导体层序列具有垂直一个地上下延伸的半导体层。 活性层包括具有大于或等于30μm的宽度的有源区，其通过辐射耦合出表面在操作期间发射激光辐射。 辐射耦合出表面由半导体层序列的侧表面形成，并且在相反的后表面形成在纵向上具有横向增益引导的谐振器。 由于操作，半导体层序列在影响的热区域被加热。 金属化层与半导体层序列的顶侧直接接触
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公开(公告)号：US20140211821A1
公开(公告)日：2014-07-31
申请号：US14206676
申请日：2014-03-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC: H01S5/20
CPC classification number: H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
Abstract: An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
Abstract translation: 一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。 公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中 第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。
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Patent Agency Ranking
公开(公告)号：US11757254B2
公开(公告)日：2023-09-12
申请号：US16989028
申请日：2020-08-10
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Peter Fuchs , Ann Russell , Thomas Falck , Hubert Halbritter , Bruno Jentzsch , Christian Lauer
CPC classification number: H01S5/18361 , H01S3/10061 , H01S5/0281 , H01S5/18397
Abstract: An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.
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公开(公告)号：US10826276B2
公开(公告)日：2020-11-03
申请号：US16347026
申请日：2017-11-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Tomasz Swietlik
Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.
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公开(公告)号：US20180331502A1
公开(公告)日：2018-11-15
申请号：US15774417
申请日：2016-11-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Bachmann , Christian Lauer , Michael Furitsch
CPC classification number: H01S5/2036 , G02B6/4292 , H01S5/0282 , H01S5/0425 , H01S5/22 , H01S5/3201 , H01S5/34306 , H01S5/34313 , H01S2301/18
Abstract: A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.
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公开(公告)号：US20170310081A1
公开(公告)日：2017-10-26
申请号：US15649437
申请日：2017-07-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Harald König , Uwe Strauss , Alexander Bachmann
CPC classification number: H01S5/02469 , H01S5/0224 , H01S5/024 , H01S5/02461 , H01S5/0425 , H01S5/10 , H01S5/1064 , H01S5/2036 , H01S5/2054
Abstract: A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.
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公开(公告)号：US09559494B2
公开(公告)日：2017-01-31
申请号：US14805808
申请日：2015-07-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Alvaro Gomez-Iglesias
CPC classification number: H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
Abstract translation: 边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。
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