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49 条记录 (耗时 0.019 秒)

    GRATING BASED OPTICAL TRANSMITTER
    2.
    发明申请
    GRATING BASED OPTICAL TRANSMITTER 有权
    基于光栅的光发射机

    公开(公告)号：US20150249321A1

    公开(公告)日：2015-09-03

    申请号：US14635133

    申请日：2015-03-02

    申请人： Forelux Inc.

    发明人： Shu-Lu CHEN ,  Yun-Chung NA

    IPC分类号： H01S5/20 ,  H01S5/183 ,  H01S5/125

    CPC分类号： H01S5/2054 ,  G02B6/1226 ,  G02B6/124 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02F1/2257 ,  H01S5/125 ,  H01S5/183

    摘要： An optical transmitter including two reflective regions formed at two opposite ends of an interference region along a first direction and at least three electrodes electrically coupled to the interference region, where the amount of electrical carriers inside the interference region can be modulated by changing the relative electrical fields among the three electrodes, so that the amount of photons generated inside the interference region can be modulated and resonant along the first direction and emit along a second direction that is different from the first direction.

    摘要翻译： 一种光发射机，包括形成在沿着第一方向的干涉区域的两个相对端处的两个反射区域和电耦合到干涉区域的至少三个电极，其中干涉区域内的电载体的量可以通过改变相对电气 使得在干涉区域内产生的光子的量可以沿着第一方向调制和谐振，并沿着与第一方向不同的第二方向发射。

    Semiconductor Laser Diode
    3.
    发明申请
    Semiconductor Laser Diode 有权
    半导体激光二极管

    公开(公告)号：US20140334508A1

    公开(公告)日：2014-11-13

    申请号：US14361647

    申请日：2012-11-12

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Christian Lauer ,  Harald König ,  Uwe Strauß ,  Alexander Bachmann

    IPC分类号： H01S5/024 ,  H01S5/10

    CPC分类号： H01S5/02469 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2036 ,  H01S5/2054

    摘要： A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence

    摘要翻译： 提供半导体激光二极管。 半导体层序列具有垂直一个地上下延伸的半导体层。 活性层包括具有大于或等于30μm的宽度的有源区，其通过辐射耦合出表面在操作期间发射激光辐射。 辐射耦合出表面由半导体层序列的侧表面形成，并且在相反的后表面形成在纵向上具有横向增益引导的谐振器。 由于操作，半导体层序列在影响的热区域被加热。 金属化层与半导体层序列的顶侧直接接触

    SEMICONDUCTOR LASER
    5.
    发明申请
    SEMICONDUCTOR LASER 有权
    半导体激光器

    公开(公告)号：US20130195136A1

    公开(公告)日：2013-08-01

    申请号：US13565008

    申请日：2012-08-02

    申请人： Shigeyuki Takagi ,  Hidehiko Yabuhara ,  Akira Maekawa ,  Takayoshi Fujii ,  Yasutomo Shiomi

    发明人： Shigeyuki Takagi ,  Hidehiko Yabuhara ,  Akira Maekawa ,  Takayoshi Fujii ,  Yasutomo Shiomi

    IPC分类号： H01S5/20

    CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S1/00 ,  H01S5/12 ,  H01S5/2022 ,  H01S5/2031 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/166 ,  H01S2301/176

    摘要： A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

    摘要翻译： 半导体激光器包括：具有包括量子阱层的有源层的层叠体，所述有源层具有级联结构，所述级联结构包括能够发射波长不小于12μm且不大于18μm的红外激光的第一区域 通过量子阱层的子带间光学跃迁和能够缓和交替堆叠的载流子的能量的第二区域，该层叠体具有脊波导并能够发射红外激光; 以及电介质层，其被设置为夹着所述层叠体的至少一部分侧面的两侧，所述电介质层的透射率降低至50％的波长为16μm以上，所述电介质层具有折射率 低于构成活性层的所有层的折射率。

    Current Confining Structure and Semiconductor Laser
    7.
    发明申请
    Current Confining Structure and Semiconductor Laser 审中-公开
    电流限制结构和半导体激光器

    公开(公告)号：US20080089376A1

    公开(公告)日：2008-04-17

    申请号：US11663320

    申请日：2005-09-08

    申请人： Takayoshi Anan

    发明人： Takayoshi Anan

    IPC分类号： H01S5/30 ,  H01S5/32

    CPC分类号： H01S5/18311 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2054 ,  H01S5/3211 ,  H01S2301/166

    摘要： To provide such a technique as to solve problems about a high operating voltage, temperature rise due to heat generation, in-plane non-uniform injection, and a small modulation bandwidth upon high-speed modulation in a surface-emitting laser. A current confining structure according to the present invention includes an n-type semiconductor layer 102, a current confining layer 106, a current-diffusion preventing layer 103, an active layer 104, and a p-type semiconductor layer 105, which are laminated in order on an n-type semiconductor substrate 101. The current confining layer 106 is composed of a current carrying layer 106b and a current blocking layer 106a. The current-diffusion preventing layer 103 includes an n-type or undoped dilute nitrogen-based compound semiconductor layer containing 0.1% or more of nitrogen.

    摘要翻译： 提供这样的技术来解决在表面发射激光器中高速调制时的高工作电压，由于发热引起的温度升高，面内不均匀注入和小调制带宽的问题。 根据本发明的电流限制结构包括层叠在n型半导体层102中的n型半导体层102，电流限制层106，电流扩散防止层103，有源层104和p型半导体层105 在n型半导体衬底101上。 电流限制层106由载流层106b和电流阻挡层106a组成。 电流扩散防止层103包括含有0.1％以上氮的n型或未掺杂的稀氮类化合物半导体层。