公开(公告)号：US12207483B2

公开(公告)日：2025-01-21

申请号：US17347460

申请日：2021-06-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Takahiro Koyanagi ,  Yuuko Tomekawa ,  Shinichi Machida

IPC: H10K39/32 ,  H10K30/30

Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.

公开(公告)号：US12199124B2

公开(公告)日：2025-01-14

申请号：US17493923

申请日：2021-10-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuuko Tomekawa ,  Yoshihiro Sato

IPC: H01L27/146

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

公开(公告)号：US12094893B2

公开(公告)日：2024-09-17

申请号：US17391793

申请日：2021-08-02

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yuuko Tomekawa ,  Takahiro Koyanagi ,  Takeyoshi Tokuhara

IPC: H01L27/146 ,  H01L49/02

CPC classification number: H01L27/14609 ,  H01L28/60

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

公开(公告)号：US11114481B2

公开(公告)日：2021-09-07

申请号：US16118220

申请日：2018-08-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuuko Tomekawa ,  Takahiro Koyanagi ,  Takeyoshi Tokuhara

IPC: H01L29/78 ,  H01L21/28 ,  H01L27/108 ,  H01L21/02 ,  H01L27/146 ,  H01L49/02

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

公开(公告)号：US10916621B2

公开(公告)日：2021-02-09

申请号：US16109809

申请日：2018-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro Koyanagi ,  Yuuko Tomekawa

IPC: H01L49/02 ,  H01L27/146 ,  H01L21/3115 ,  H01L27/30 ,  H01L21/02

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.