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公开(公告)号：US12289928B2
公开(公告)日：2025-04-29
申请号：US17347447
申请日：2021-06-14
Inventor： Daisuke Wakabayashi , Yuuko Tomekawa
IPC: H01L21/768 , H01L23/522 , H04N25/70 , H10F39/00
Abstract: A photoelectric conversion device includes: a substrate; a photodetection film including a first surface facing the substrate and a second surface opposing the first surface; first electrodes provided between the substrate and the photodetection film; a second electrode provided between the substrate and the photodetection film and including a first portion overlapped with the first surface and a second portion not overlapped therewith when viewed from a normal direction of the substrate; a third electrode provided on the second surface of the photodetection film and including a third surface facing the second surface; wiring allowing for conduction between the second and third electrodes; and a first conductive plug connected with the first portion and extending toward the substrate. Material of the first conductive plug differs from that of the second electrode. The wiring is in contact with a side surface of the photodetection film and the second portion.
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公开(公告)号：US10923560B2
公开(公告)日：2021-02-16
申请号：US16259102
申请日：2019-01-28
Inventor： Takahiro Koyanagi , Yuuko Tomekawa , Takeshi Harada , Yoshio Kawashima
IPC: H01L21/00 , H01L49/02 , H01L21/3215 , H01L21/285 , H01L21/02 , H01L27/146 , H01L27/108
Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.
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公开(公告)号：US11895854B2
公开(公告)日：2024-02-06
申请号：US17809040
申请日：2022-06-27
Inventor： Takahiro Koyanagi , Yuuko Tomekawa
IPC: H10K39/32 , H01L27/146
CPC classification number: H10K39/32 , H01L27/14665
Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.
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公开(公告)号：US12082427B2
公开(公告)日：2024-09-03
申请号：US17324181
申请日：2021-05-19
Inventor： Takahiro Koyanagi , Yuuko Tomekawa
CPC classification number: H10K39/32 , H10K30/353 , H10K30/82 , H10K30/87
Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode, and an electron blocking layer that suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of chromium and is arranged between the first electrode and the photoelectric conversion layer.
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公开(公告)号：US09876046B2
公开(公告)日：2018-01-23
申请号：US15073611
申请日：2016-03-17
Inventor： Yuuko Tomekawa , Tokuhiko Tamaki
IPC: H01L27/146 , H04N5/363 , H04N5/232 , H01L27/30
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14665 , H01L27/307 , H04N5/23245 , H04N5/363
Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal. The signal detection transistor includes a gate and a source region and a drain region, the first capacitance element includes a first lower electrode, a first upper electrode, and a dielectric film disposed therebetween, the upper wiring layer is disposed between the second electrode and the gate, and the upper wiring layer includes the first upper electrode.
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Patent Agency Ranking
公开(公告)号：US12051710B2
公开(公告)日：2024-07-30
申请号：US17705226
申请日：2022-03-25
Inventor： Daisuke Wakabayashi , Yuuko Tomekawa
IPC: H01L27/146 , H04N5/3745 , H04N25/77
CPC classification number: H01L27/14623 , H01L27/14612 , H01L27/14636 , H04N25/77
Abstract: An imaging device includes a pixel section and a peripheral circuitry section provided around the pixel section. The pixel section includes: a photoelectric conversion film; a top electrode located above the photoelectric conversion film; bottom electrodes that face the top electrode, with the photoelectric conversion film being disposed between the top electrode and the bottom electrodes; and a first light-shielding film that overlaps part of the photoelectric conversion film in a plan view and that is electrically connected to the top electrode. The first light-shielding film has electrical conductivity. The peripheral circuitry section includes peripheral circuitry and a second light-shielding film that overlaps at least part of the peripheral circuitry in the plan view. The first light-shielding film and the second light-shielding film are separated from each other.
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公开(公告)号：US11996422B2
公开(公告)日：2024-05-28
申请号：US17028627
申请日：2020-09-22
Inventor： Masayuki Takase , Shunsuke Isono , Yuuko Tomekawa
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14636
Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.
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公开(公告)号：US11955493B2
公开(公告)日：2024-04-09
申请号：US17095691
申请日：2020-11-11
Inventor： Yuuko Tomekawa , Katsuya Nozawa
IPC: H01L27/146 , H01L27/30 , H10K39/32
CPC classification number: H01L27/14605 , H01L27/14636 , H10K39/32
Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.
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公开(公告)号：US11527560B2
公开(公告)日：2022-12-13
申请号：US17067151
申请日：2020-10-09
Inventor： Yuuko Tomekawa , Takahiro Koyanagi , Hiroyuki Amikawa , Yasuyuki Endoh
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.
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公开(公告)号：US12295196B2
公开(公告)日：2025-05-06
申请号：US18051866
申请日：2022-11-01
Inventor： Daisuke Wakabayashi , Yuuko Tomekawa
IPC: H10K39/32 , H01L27/146 , H10K39/38
Abstract: An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.
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