摘要:
At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.
摘要:
An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. In at least one embodiment, it includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking account of the present polarization state without using X-ray radiation. At least one embodiment of the invention additionally relates to a calibration method for such an X-ray detector.
摘要:
At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.
摘要:
A detector module is disclosed including a plurality of directly converting detector submodules, each with a back contact, and a scattered radiation collimator spanning the detector submodules. For contacting the back contacts, a contacting unit is provided in at least one embodiment and designed so that a contact connection is established between the contacting unit and the counter-electrodes by way of assembly-related proximity of the scattered radiation collimator and the counter-electrodes.
摘要:
The invention relates to a device for capturing ionizing radiation, in which a substrate which is provided with a phosphor layer is accommodated in a housing. To simplify the device and to ensure a high light yield, the invention provides that a means for buffering the atmospheric humidity is accommodated in the housing.
摘要:
A method is disclosed, in at least one embodiment, for producing a scintillator for a radiation detector, in which the scintillator is produced in layers by depositing a scintillator material using a PVD process. By using a PVD process, owing to lower process temperatures of less than 300° C., it is possible to produce scintillators with decay times of less than 1.1 ns over large surfaces. In this way, the prerequisites for quantitative and energy-selective detection of individual radiation quanta can be satisfied even with fluxes of more than 108 X-ray quanta/mm2*s. At least one embodiment of the invention also relates to a scintillator produced by such a method.
摘要:
A method is disclosed, in at least one embodiment, for producing a scintillator for a radiation detector, in which the scintillator is produced in layers by depositing a scintillator material using a PVD process. By using a PVD process, owing to lower process temperatures of less than 300° C., it is possible to produce scintillators with decay times of less than 1.1 ns over large surfaces. In this way, the prerequisites for quantitative and energy-selective detection of individual radiation quanta can be satisfied even with fluxes of more than 108 X-ray quanta/mm2*s. At least one embodiment of the invention also relates to a scintillator produced by such a method.
摘要:
A detector module is disclosed including a plurality of directly converting detector submodules, each with a back contact, and a scattered radiation collimator spanning the detector submodules. For contacting the back contacts, a contacting unit is provided in at least one embodiment and designed so that a contact connection is established between the contacting unit and the counter-electrodes by way of assembly-related proximity of the scattered radiation collimator and the counter-electrodes.
摘要:
An X-ray detector is disclosed. In at least one embodiment, the X-ray detector includes a detector housing including a plurality of detector modules that extend into an interior space of the detector housing, the detector housing being designed to feed a coolant into the interior space. In order to cool the detector modules, in at least one embodiment the latter are respectively arranged on a hollow module carrier forming a cooling channel, it being possible for coolant to flow through the cooling channel during operation.
摘要:
A protective layer is provided for an image detector used for an x-ray image. This image detector comprises a layer of luminescent material that is to be protected against mechanical stress and moisture. A polymeric protective layer is disposed thereupon and is hardened exclusively in an area which does not border the layer of luminescent material. The hardened area provides protection against mechanical stress while the remaining area forms a moisture barrier. An appertaining method is provided for producing a polymeric protective layer on an image detector for an x-ray image, which is provided with a layer of luminescent material. The protective layer is deposited on the layer of luminescent material and then is hardened only in an area which does not border the layer of luminescent material.