公开(公告)号：US10079203B2

公开(公告)日：2018-09-18

申请号：US15271605

申请日：2016-09-21

申请人： Yong-Hoon Son ,  Cha-Dong Yeo ,  Han-Mei Choi ,  Kyung-Hyun Kim ,  Phil-Ouk Nam ,  Kwang-Chul Park ,  Yeon-Sil Sohn ,  Jin-I Lee ,  Won-Bong Jung

发明人： Yong-Hoon Son ,  Cha-Dong Yeo ,  Han-Mei Choi ,  Kyung-Hyun Kim ,  Phil-Ouk Nam ,  Kwang-Chul Park ,  Yeon-Sil Sohn ,  Jin-I Lee ,  Won-Bong Jung

IPC分类号： H01L23/522 ,  H01L27/11582 ,  H01L21/768 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/1157

CPC分类号： H01L23/5226 ,  H01L21/76816 ,  H01L21/76877 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

摘要： A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a vertical direction with respect to a top surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and being stacked on top of each other and spaced apart from each other along the vertical direction, and a plurality of metal gate patterns stacked on top of each other. The metal gate patterns are spaced apart from each other along the vertical direction. Each of the metal gate patterns surrounds a corresponding one of the non-metal gate patterns.