DYNAMIC BUFFER FOR STORAGE SYSTEM
    17.
    发明申请

    公开(公告)号:US20220300198A1

    公开(公告)日:2022-09-22

    申请号:US17832309

    申请日:2022-06-03

    Abstract: A storage system has NVRAM (nonvolatile random-access memory), storage memory that includes SLC (single level cell) flash memory and QLC (quad level cell) flash memory, and a processor. The processor performs a method that includes determining that a size of a buffer of a storage system should be adjusted. The storage system comprises a non-volatile random-access memory (NVRAM), single level cell (SLC) flash memory, and quad level cell (QLC) flash memory. The buffer of the storage system comprises one or more of the NVRAM and a portion of the SLC flash memory. The method also includes adjusting the size of the buffer of the storage system to a first size.

    STORAGE SYSTEM WITH SELECTABLE WRITE PATHS

    公开(公告)号:US20220206702A1

    公开(公告)日:2022-06-30

    申请号:US17139460

    申请日:2020-12-31

    Abstract: A storage system has a first memory, and a second memory that includes storage memory. The storage system has a processing device. The processing device is to select whether to write data to the first memory and write the data from the first memory to the second memory, or to write the data to the second memory bypassing the first memory. The processing device is to write portions of data for storage according to such selection.

    OVERLAPPING RAID GROUPS
    19.
    发明申请

    公开(公告)号:US20210264987A1

    公开(公告)日:2021-08-26

    申请号:US17318534

    申请日:2021-05-12

    Abstract: A method of using boot-time metadata in a storage system is provided. The method includes writing a fragmentation stride to a solid-state storage device of the storage system, the fragmentation stride defining a granularity on which fragmentation of erase blocks of the solid-state storage device occurs. The method includes allocating portions of erase blocks for at least one process in the storage system, in accordance with the fragmentation stride and writing boot up metadata at offsets that are based on the fragmentation stride, in the solid-state storage device.

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