Metadata registers for a memory device

    公开(公告)号:US12159033B2

    公开(公告)日:2024-12-03

    申请号:US18047493

    申请日:2022-10-18

    Abstract: This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method of handling data and metadata at a memory device includes receiving data from the host via the at least one data connection into the first plurality of registers; receiving metadata from the host via the at least one non-data connection into the second plurality of registers; storing the data in the first portion of the memory array; and storing the metadata in the second portion of the memory array. Other aspects and features are also claimed and described.

    FLEXIBLE METADATA REGIONS FOR A MEMORY DEVICE

    公开(公告)号:US20240385747A1

    公开(公告)日:2024-11-21

    申请号:US18320492

    申请日:2023-05-19

    Abstract: This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method includes receiving, from a host, a message comprising instructions to configure a first portion of a memory array for storage of data and metadata and to configure a second portion of the memory array for storage of only data and configuring the memory array in accordance with the received message. Other aspects and features are also claimed and described.

    Partial refresh technique to save memory refresh power

    公开(公告)号:US11631450B2

    公开(公告)日:2023-04-18

    申请号:US17377799

    申请日:2021-07-16

    Abstract: In a conventional memory subsystem, a memory controller issues explicit refresh commands to a DRAM memory device to maintain integrity of the data stored in the memory device when the memory device is in an auto-refresh mode. A significant amount of power may be consumed to carry out the refresh. To address this and other issues, it is proposed to allow a partial refresh in the auto-refresh mode in which the refreshing operation may be skipped for a subset of the memory cells. Through such selective refresh skipping, the power consumed for auto-refreshes may be reduced. Operating system kernels and memory drivers may be configured to determine areas of memory for which the refreshing operation can be skipped.

    Memory with system ECC
    15.
    发明授权

    公开(公告)号:US11372717B2

    公开(公告)日:2022-06-28

    申请号:US16944110

    申请日:2020-07-30

    Abstract: Methods and apparatuses for a system error-correcting code function are presented. The apparatus includes a memory configured to communicate with a host. The memory includes a memory array configured to store data. The memory is configured to provide the data stored in the memory array to the host in performing computing functions and configured to provide an error-correction code (ECC) associated with the data to the host. The ECC is not stored in the memory array in a first configuration of the memory and is stored in the memory array in a second configuration of the memory.

    METADATA REGISTERS FOR A MEMORY DEVICE

    公开(公告)号:US20250060877A1

    公开(公告)日:2025-02-20

    申请号:US18939310

    申请日:2024-11-06

    Abstract: This disclosure provides systems, methods, and devices for memory systems that support metadata. In a first aspect, a method of handling data and metadata at a memory device includes receiving data from the host via the at least one data connection into the first plurality of registers; receiving metadata from the host via the at least one non-data connection into the second plurality of registers; storing the data in the first portion of the memory array; and storing the metadata in the second portion of the memory array. Other aspects and features are also claimed and described.

    Memory with dynamic voltage scaling

    公开(公告)号:US11295803B2

    公开(公告)日:2022-04-05

    申请号:US16945303

    申请日:2020-07-31

    Abstract: Methods and apparatuses for to memories using dynamic voltage scaling are presented. The apparatus includes memory configured to communicate with a host. The memory includes a peripheral portion and a memory array. The memory is further configured to receive, from at least one power management circuit, a first supply voltage and a second supply voltage. The memory further includes a switch circuit. The switch circuit is configured to selectively provide the first supply voltage and the second supply voltage to the peripheral portion. The first supply voltage is static and has a first voltage range. The second supply voltage has a low second voltage range and a high second voltage range.

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