公开(公告)号：US10522687B2

公开(公告)日：2019-12-31

申请号：US15879109

申请日：2018-01-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Stephen Alan Fanelli ,  Farid Azzazy

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L27/12

Abstract: A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.

公开(公告)号：US10134837B1

公开(公告)日：2018-11-20

申请号：US15638874

申请日：2017-06-30

Applicant: QUALCOMM Incorporated

Inventor： Stephen Alan Fanelli ,  Richard Hammond

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/762

Abstract: A semiconductor on insulator (SOI) device may include a semiconductor handle substrate. The semiconductor hand may include a porous semiconductor layer, and an etch stop layer proximate the porous semiconductor layer. The SOI may also include an insulator layer on the etch stop layer. The SOI may further include a device semiconductor layer on the insulator layer.