公开(公告)号：US20240079458A1

公开(公告)日：2024-03-07

申请号：US18322989

申请日：2023-05-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoki AYANO ,  Takahiro MARUYAMA ,  Yuya ABIKO

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/401 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813

Abstract: A trench is formed in a semiconductor substrate. An insulating film is formed in the trench and on an upper surface of the semiconductor substrate. An ion implantation is performed to the insulating film. An etching treatment is performed to the insulating film, thereby a thickness of the insulating film is reduced. A conductive film is formed in the trench via the insulating film. In plan view, the trench extends in a Y-direction. The above-described ion implantation is performed from a direction inclined by a predetermined angle from an extending direction of a normal line with respect to the upper surface of the semiconductor substrate.

公开(公告)号：US20210118897A1

公开(公告)日：2021-04-22

申请号：US17032839

申请日：2020-09-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takuya MARUYAMA ,  Takahiro MARUYAMA

IPC: H01L27/11568 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423

Abstract: A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.