公开(公告)号：US10268250B2

公开(公告)日：2019-04-23

申请号：US15649051

申请日：2017-07-13

Applicant: Renesas Electronics Corporation

Inventor： Hiromi Notani ,  Takayuki Fukuoka ,  Takashi Yamaki

IPC: G06F1/26

Abstract: A semiconductor device having an active mode and a standby mode as operation modes, includes a first power supply line supplied with a first internal power supply voltage from a first external power supply and an internal power supply circuit generating a second internal power supply voltage based on an external power supply voltage from a second external power supply circuit. A second power supply line supplied with said second internal power supply voltage from said internal power supply circuit.

公开(公告)号：US10192613B2

公开(公告)日：2019-01-29

申请号：US15386642

申请日：2016-12-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takashi Yamaki

IPC: G11C5/02 ,  G11C11/419 ,  G11C5/14 ,  G11C7/22 ,  G11C11/413 ,  G06F1/26 ,  G06F3/06 ,  G11C11/418 ,  G11C11/417

Abstract: In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block. A transmission path of the control signal is provided such that the control signal is inputted in parallel to the memory module via an inside-of-module path, and such that the control signal is outputted by a particular memory module of the memory modules via the inside-of-module path to a downstream outside-of-module path. The particular memory module in the memory block is selected such that it has a greater storage capacity than the other memory modules belonging to this same memory block have.