Full swing BiCMOS amplifier
    12.
    发明授权
    Full swing BiCMOS amplifier 失效
    全摆幅BiCMOS放大器

    公开(公告)号:US5309042A

    公开(公告)日:1994-05-03

    申请号:US14986

    申请日:1993-02-08

    Applicant: Robert Joly

    Inventor: Robert Joly

    CPC classification number: H03K19/013 H03K19/09448

    Abstract: A BiCMOS amplifier provides full swing with fast transitions from V.sub.dd to V.sub.ss and from V.sub.ss to V.sub.dd, and therefore has important applications in low voltage BiCMOS VLSI circuits. A bipolar totem pole output transistor pair is connected between a supply voltage, V.sub.dd and ground, V.sub.ss. A fast output transition from V.sub.dd to V.sub.ss is accomplished by extending the conduction range of the pull down bipolar transistor. An n-channel MOSFET is fabricated to provide a 0 V.sub.t pass transistor. The pass transistor is coupled to a first of the bipolar output transistor pair, the pull up transistor, to inject carriers into the base of the output transistor and extend the transistor's conduction, such that the transistor provides a fast output upswing from V.sub.ss to V.sub.dd.

    Abstract translation: BiCMOS放大器提供从Vdd到Vss,从Vss到Vdd的快速转换的全速摆幅,因此在低电压BiCMOS VLSI电路中具有重要的应用。 双极图腾柱输出晶体管对连接在电源电压Vdd和地之间,Vss。 通过延长下拉式双极晶体管的导通范围,可以实现从Vdd到Vss的快速输出转换。 制造n沟道MOSFET以提供0 Vt传输晶体管。 传输晶体管耦合到双极性输出晶体管对中的第一个上拉晶体管,以将载流子注入输出晶体管的基极并延伸晶体管的导通,使得晶体管提供从Vss向Vdd的快速输出上升。

    Diode array convolver
    13.
    发明授权
    Diode array convolver 失效
    二极管阵列卷积器

    公开(公告)号:US4259726A

    公开(公告)日:1981-03-31

    申请号:US957763

    申请日:1978-11-03

    Applicant: Robert Joly

    Inventor: Robert Joly

    CPC classification number: G06E3/005

    Abstract: A diode array convolver using narrow rails on a transparent piezoelectric substrate to support a MESA diode array.

    Abstract translation: 在透明压电基片上使用窄轨的二极管阵列卷积器,以支持MESA二极管阵列。

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