公开(公告)号：US20130327149A1

公开(公告)日：2013-12-12

申请号：US13912434

申请日：2013-06-07

Applicant: ROHM CO., LTD.

Inventor： Goro NAKATANI

IPC: G01L9/12

CPC classification number: G01L9/12 ,  G01L9/0073

Abstract: A capacitive pressure sensor includes a semiconductor substrate, a first insulating portion configured to define a sensor region, a reference pressure chamber configured to divide a lower portion of the sensor region in a direction, a second insulating portion configured to divide a surface portion of the sensor region above the reference pressure chamber in the direction, and a trench configured to divide the sensor region in the direction. The sensor region is divided into at least three semiconductor parts by the reference pressure chamber, the second insulating portion, and the trench.

Abstract translation: 电容式压力传感器包括半导体衬底，被配置为限定传感器区域的第一绝缘部分，被配置为在传感器区域的一个方向上分隔下部的基准压力室，构造成将传感器区域的表面部分分割成的第二绝缘部分 传感器区域在所述方向上在所述参考压力室上方，以及沟槽，被配置为沿所述方向划分所述传感器区域。 传感器区域被参考压力室，第二绝缘部分和沟槽分成至少三个半导体部件。

公开(公告)号：US20210001641A1

公开(公告)日：2021-01-07

申请号：US16911293

申请日：2020-06-24

Applicant: Rohm Co., Ltd.

Inventor： Goro NAKATANI ,  Akira FUJITA ,  Kazuya NAKAKUBO ,  Yasuhiro FUWA

IPC: B41J2/335 ,  B41J2/34

Abstract: A thermal printhead includes a substrate, a protrusion formed on an obverse surface of the substrate and extending in a main scanning direction, a heat storage layer formed on a top surface of the protrusion, and a plurality of heat-generating parts arranged along the main scanning direction on the heat storage layer. The substrate and the protrusion are integrally formed from a single-crystal semiconductor.

公开(公告)号：US20150214259A1

公开(公告)日：2015-07-30

申请号：US14659673

申请日：2015-03-17

Applicant: ROHM CO., LTD.

Inventor： Takamitsu YAMANAKA ,  Goro NAKATANI ,  Osamu MATSUSHIMA ,  Kenichi MIYAZAKI

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L27/1461 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%.

Abstract translation: 根据本发明的光电转换器包括绝缘层，相互间隔并设置在绝缘层上的多个下电极，由黄铜矿化合物半导体制成并形成为一起覆盖多个下电极的光吸收层， 以及形成为覆盖光吸收层的透明导电膜。 由此消除了由于光吸收层的蚀刻引起的影响（损伤）的像素之间的灵敏度的变化，并且可以使像素开口率为100％。