公开(公告)号：US20070258147A1

公开(公告)日：2007-11-08

申请号：US11713800

申请日：2007-03-05

申请人： Milko Van Der Boom ,  Atindra Shukla ,  David Rosenblatt ,  Tarkeshwar Gupta

发明人： Milko Van Der Boom ,  Atindra Shukla ,  David Rosenblatt ,  Tarkeshwar Gupta

IPC分类号： G02B5/20 ,  C07D401/10 ,  C07F17/00 ,  H01S4/00 ,  C07F7/02 ,  G01N33/00

CPC分类号： C07F15/0026 ,  C07F7/1804 ,  C07F15/0053 ,  G01N27/30 ,  G01N27/305 ,  G01N27/3275 ,  G01Q80/00 ,  G02F1/15 ,  H01G9/2018 ,  H01G9/2059 ,  H01L51/0002 ,  H01L51/0086 ,  H01L51/0088 ,  Y02E10/542 ,  Y02E10/549 ,  Y10T29/49002

摘要： A device is presented having reversibly changeable and optically readable optical properties. The device comprises a substrate having an electrically conductive surface and carrying a redox-active layer structure. The redox-active layer structure may be a monolayer or a multi-layer structure and is configured to have at least one predetermined electronic property including at least one of electrodensity and oxidation state. The electronic property of the layer structure defines an optical property of the structure thereby determining an optical response of the structure to certain incident light. This at least one electronic property is changeable by subjecting the redox-active layer structure to an electric field or to a redox-active material. The device thus enables effecting a change in said electronic property that results in a detectable change in the optical response of the layer structure.

摘要翻译： 呈现具有可逆变化和光学可读光学性质的装置。 该器件包括具有导电表面并承载氧化还原活性层结构的衬底。 氧化还原活性层结构可以是单层或多层结构，并且被配置为具有包括电密度和氧化态中的至少一种的至少一种预定的电子性质。 层结构的电子特性限定了该结构的光学特性，从而确定该结构对某些入射光的光响应。 通过使氧化还原活性层结构经受电场或氧化还原活性物质，该至少一种电子性质是可变化的。 因此，该装置能够实现导致层结构的光学响应的​​可检测变化的所述电子特性的变化。

公开(公告)号：US06716354B2

公开(公告)日：2004-04-06

申请号：US09801507

申请日：2001-03-08

申请人： Aaron A. Rosenblatt ,  Thomas E. McWhorter ,  David Rosenblatt ,  Dale Genther ,  Keith Muller

发明人： Aaron A. Rosenblatt ,  Thomas E. McWhorter ,  David Rosenblatt ,  Dale Genther ,  Keith Muller

IPC分类号： C02F176

CPC分类号： C02F1/76 ,  C02F1/001 ,  C02F1/24 ,  C02F1/44 ,  C02F1/52 ,  C02F2103/02 ,  C02F2303/04 ,  Y10S210/908

摘要： Raw water is treated with chlorine, chlorine dioxide and ammonia in various stages as it proceeds from raw water acquisition through clarification (e.g., coagulation, flocculation, sedimentation, and filtration) to storage of finished water from which the treated water can be introduced into a distribution system. Chlorine dioxide can be used as a pre-oxidant or disinfectant. Chlorine can be used as a disinfectant or to react with ammonia to produce monochloramine.

摘要翻译： 原水在从原水获取通过澄清（例如凝结，絮凝，沉淀和过滤）到储存经过处理的水可以被引入的成品水中的各个阶段中经过氯，二氧化氯和氨的处理 分发系统。 二氧化氯可用作预氧化剂或消毒剂。 氯可用作消毒剂或与氨反应产生一氯胺。

公开(公告)号：US06512235B1

公开(公告)日：2003-01-28

申请号：US09561958

申请日：2000-05-01

申请人： Guy Eitan ,  Ory Zik ,  David Rosenblatt

发明人： Guy Eitan ,  Ory Zik ,  David Rosenblatt

IPC分类号： H01J2700

CPC分类号： B82Y10/00 ,  G01N23/04 ,  Y10S977/939

摘要： A device that produces an electron beam with high optical quality for processing a sample, is presented. The optical quality is manifested by very high brightness and low energy spread. The device includes an electron source device comprising an electrode in the form of a shaped first layer, preferably in the form of a conducting crater carrying at least one nanotube, and an extracting electrode, which is formed with at least one aperture and is insulated from the firs layer. The source can be used in any column that requires such properties. The column according to the invention may be a full size or a miniature electron microscope, a lithography tool, a tool used for direct writing of wafers or a field emission display.

摘要翻译： 提出了一种产生高光学质量的电子束来处理样品的装置。 光学质量表现为非常高的亮度和低的能量传播。 该装置包括电子源装置，该电子源装置包括成形第一层形式的电极，优选形式为承载至少一个纳米管的导电火山口，以及提供电极，该电极形成有至少一个孔， 第一层。 源可用于需要此类属性的任何列。 根据本发明的色谱柱可以是全尺寸或微型电子显微镜，光刻工具，用于直接写入晶片的工具或场致发射显示器。

公开(公告)号：US20050019210A1

公开(公告)日：2005-01-27

申请号：US10494219

申请日：2002-11-04

申请人： Aron Rosenblatt ,  Thomas McWhorter ,  David Rosenblatt

发明人： Aron Rosenblatt ,  Thomas McWhorter ,  David Rosenblatt

IPC分类号： A01N59/00 ,  A61L2/20 ,  C01B11/02

CPC分类号： A61L9/015 ,  A01N59/00 ,  A61L2/20 ,  C01B11/023 ,  C01B11/024 ,  A01N25/18 ,  A01N25/00

摘要： Method for decontaminating structures by sealing the structure and introducing a chlorine dioxide gas/diluent gas mixture into and circulating through the structure to kill bio-contaminants in the structure.

摘要翻译： 通过密封结构并将二氧化氯气体/稀释剂气体混合物引入并循环通过结构以消除结构中的生物污染物来净化结构的方法。

公开(公告)号：US5944970A

公开(公告)日：1999-08-31

申请号：US841031

申请日：1997-04-29

申请人： David Rosenblatt

发明人： David Rosenblatt

IPC分类号： G01N27/333 ,  G01N27/414

CPC分类号： G01N27/4148

摘要： A solid state electrochemical sensor includes a conductive base layer which supports a chemically sensitive membrane, a guard ring layer located below the base layer and insulated therefrom by a dielectric insulator ring layer. The two ring layers define a central hole through which access to the underside of the base layer is provided. The side wall of the hole is coated with a dielectric oxide layer and a metal conductor is laid on the oxide layer and is ohmically bonded to the base layer. A second dielectric oxide layer covers the metal conductor and a metallic inner guard layer covers the second dielectric oxide layer and is in ohmic contact with the guard ring layer. A CMOS buffer amplifier (voltage follower amplifier) is formed on the lower surface of the guard ring layer. The input to the buffer amplifier is coupled to the conductor in ohmic contact with the base layer and the output of the buffer amplifier is coupled to the guard ring. The guard ring and the metallic inner guard layer form an active shield (guard) around the conductor which transmits the potential of the membrane to the amplifier. The amplifier powers the guard to the same potential as the membrane which insures that the membrane potential is read properly without corruption due to capacitive loading by parasitics, shorting caused by leakage currents, or capacitively coupled noise.

摘要翻译： 固体电化学传感器包括支撑化学敏感膜的导电基底层，位于基底层下方并通过介电绝缘体环层绝缘的保护环层。 两个环形层限定了一个中心孔，通过该中心孔提供对底层的下侧的接近。 孔的侧壁涂覆有电介质氧化物层，并且金属导体铺设在氧化物层上并与欧姆式结合到基底层上。 第二电介质氧化物层覆盖金属导体，金属内部保护层覆盖第二电介质氧化物层并且与保护环层欧姆接触。 在保护环层的下表面上形成有CMOS缓冲放大器（电压跟随放大器）。 缓冲放大器的输入端与基极欧姆接触地耦合到导体，缓冲放大器的输出耦合到保护环。 护环和金属内保护层在导体周围形成有源屏蔽（保护），其将膜的电位传递到放大器。 放大器为防护层提供与膜相同的电位，确保膜电位被正确读取，而不会由于寄生效应的容性负载而损坏，由漏电流引起的短路或电容耦合噪声。