Display substrate and display apparatus including the same

    公开(公告)号:US11094764B2

    公开(公告)日:2021-08-17

    申请号:US16733651

    申请日:2020-01-03

    摘要: A display substrate includes a data line extending in a first direction, a first transistor including a first channel area overlapping the data line and a first control electrode which overlaps the first channel area and has a substantially same shape as that of the first channel area in an overlap area in which the first control electrode overlaps the first channel area, a scan line extending in a second direction crossing the first direction, a first voltage line extending in the first direction and transfers a first driving signal, a first capacitor including an extension electrode which overlaps the first control electrode and extends in the second direction from the first voltage line and a second capacitor including an overlap electrode overlapping the data line.

    DISPLAY PANELS, METHODS OF MANUFACTURING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICES HAVING THE SAME
    13.
    发明申请
    DISPLAY PANELS, METHODS OF MANUFACTURING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICES HAVING THE SAME 有权
    显示面板及其制造方法和有机发光显示装置

    公开(公告)号:US20160027853A1

    公开(公告)日:2016-01-28

    申请号:US14596556

    申请日:2015-01-14

    IPC分类号: H01L27/32 H01L27/12

    CPC分类号: H01L27/3262 H01L27/127

    摘要: A display device includes a substrate and first, second and third thin film transistor. The first thin film transistor is disposed over the substrate, and includes a first gate electrode which has a first transmittance. The second thin film transistor is disposed over the substrate, and includes a second gate electrode which has a second transmittance substantially different from the first transmittance. The third thin film transistor is disposed over the substrate, and includes a third gate electrode which has a third transmittance substantially different from the first transmittance.

    摘要翻译: 显示装置包括基板和第一,第二和第三薄膜晶体管。 第一薄膜晶体管设置在衬底上,并且包括具有第一透射率的第一栅电极。 第二薄膜晶体管设置在衬底上,并且包括具有与第一透射率显着不同的第二透射率的第二栅电极。 第三薄膜晶体管设置在基板上,并且包括具有与第一透射率几乎不同的第三透射率的第三栅电极。

    Electrostatic protection diode and organic light emitting display device including electrostatic protection structure

    公开(公告)号:US10319711B2

    公开(公告)日:2019-06-11

    申请号:US15638961

    申请日:2017-06-30

    IPC分类号: H01L27/02 H01L27/32 H01L27/12

    摘要: An organic light emitting display device includes a substrate including a pixel region and a peripheral region, a first wiring, a second wiring, a third wiring, and an electrostatic protection structure including electrostatic protection diodes coupled to the first, second, and third wirings. The electrostatic protection diodes each include an active pattern, a gate electrode pattern, and a connection pattern. The active pattern is at the peripheral region of the substrate, and has a first region, a second region spaced apart from the first region, and a third region between the first and second regions. The gate electrode pattern is at the third region on the active pattern. The connection pattern is coupled to the gate electrode pattern and the active pattern and is on the gate electrode pattern, and overlaps a portion of the first region of the active pattern and a portion of the third region.

    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
    17.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光显示器及其制造方法

    公开(公告)号:US20150243716A1

    公开(公告)日:2015-08-27

    申请号:US14567982

    申请日:2014-12-11

    IPC分类号: H01L27/32 H01L51/52 H01L51/56

    摘要: An organic light emitting display includes a substrate, a first electrode, an organic emission layer, a second electrode, an insulating layer, and an auxiliary electrode. The substrate has at least one thin film transistor formed thereon. The first electrode is electrically coupled (e.g., electrically connected) to the thin film transistor on the substrate. The organic emission layer is formed on the first electrode. The second electrode is formed on the organic emission layer. The insulating layer is formed on the second electrode. The auxiliary electrode is formed on the insulating layer to be electrically coupled to the second electrode.

    摘要翻译: 有机发光显示器包括基板,第一电极,有机发射层,第二电极,绝缘层和辅助电极。 衬底具有形成在其上的至少一个薄膜晶体管。 第一电极与衬底上的薄膜晶体管电耦合(例如,电连接)。 有机发光层形成在第一电极上。 第二电极形成在有机发射层上。 绝缘层形成在第二电极上。 辅助电极形成在绝缘层上以电耦合到第二电极。

    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    有机发光显示装置及其制造方法

    公开(公告)号:US20140353597A1

    公开(公告)日:2014-12-04

    申请号:US14026696

    申请日:2013-09-13

    发明人: Ki-Wan Ahn

    IPC分类号: H01L27/32 H01L51/56

    摘要: In an aspect, an organic light emitting display device including a substrate, a first electrode on the substrate, a pixel defining layer defining pixel areas disposed on the substrate, a plurality of pixels disposed at the pixel area, wherein one of the pixels comprises a first electrode, an auxiliary electrode layer only disposed on an upper surface of the first electrode, an emission layer on the auxiliary electrode layer, and a second electrode on the emission layer is provided.

    摘要翻译: 一方面,一种有机发光显示装置,包括基板,基板上的第一电极,限定设置在基板上的像素区域的像素限定层,设置在像素区域的多个像素,其中像素之一包括 第一电极,仅设置在第一电极的上表面上的辅助电极层,辅助电极层上的发射层和发射层上的第二电极。

    TFT, METHOD OF MANUFACTURING THE TFT, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE TFT
    19.
    发明申请
    TFT, METHOD OF MANUFACTURING THE TFT, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE TFT 有权
    TFT,制造TFT的方法以及制造包括TFT的有机发光显示装置的方法

    公开(公告)号:US20140145179A1

    公开(公告)日:2014-05-29

    申请号:US13960341

    申请日:2013-08-06

    摘要: A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region.

    摘要翻译: 一种制造薄膜晶体管(TFT)的方法,包括在衬底上形成包括第一区域,第二区域和第三区域的氧化物半导体图案,直接等离子体处理氧化物半导体图案的第一区域和第二区域, 在所述基板上形成绝缘层以覆盖所述氧化物半导体图案,在所述绝缘层上形成与所述第三区域重叠的栅电极,以及形成与所述栅电极绝缘并与所述第一区域接触的源电极和漏电极 所述第二区域设置在所述第一区域和所述第三区域之间。