公开(公告)号：US09064545B2

公开(公告)日：2015-06-23

申请号：US13721859

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongsung Cho ,  Kihwan Choi ,  Il Han Park ,  Kiwhan Song ,  Sangyong Yoon

IPC: G11C16/04 ,  G11C7/04 ,  G11C16/10

CPC classification number: G11C7/04 ,  G11C16/0483 ,  G11C16/10

Abstract: A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.

Abstract translation: 非易失性存储器件的编程方法包括：确定非易失性存储器件的温度状态，根据温度条件确定编程脉冲周期，使用编程脉冲周期向选定字线提供编程电压，并提供通过电压 在将程序电压提供给所选择的字线的同时，将其作为未选择的字线。