公开(公告)号：US20210193516A1

公开(公告)日：2021-06-24

申请号：US17173784

申请日：2021-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-yeong JOE ,  Seok-hoon KIM ,  Jeong-ho YOO ,  Seung-hun LEE ,  Geun-hee JEONG

IPC: H01L21/768 ,  H01L23/528

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

公开(公告)号：US20190363009A1

公开(公告)日：2019-11-28

申请号：US16275942

申请日：2019-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-yeong JOE ,  Seok-hoon KIM ,  Jeong-ho YOO ,  Seung-hun LEE ,  Geun-hee JEONG

IPC: H01L21/768 ,  H01L23/528

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

公开(公告)号：US20190034270A1

公开(公告)日：2019-01-31

申请号：US15889741

申请日：2018-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hui-chung BYUN ,  Seung-hun LEE ,  Sun-woo LEE

IPC: G06F11/10 ,  G11C29/52

Abstract: A memory module including a plurality of memory chips each including DQ contact points which are grouped into at least one DQ group corresponding to a correction data width, a serial presence detect (SPD) chip configured to store DQ grouping information about the plurality of memory chips, and additional DQS contact points connected to the at least one DQ group, the additional DQS contact points configured to transmit signals to perform a data correction algorithm based on the correction data width in an error correction mode may be provided.

公开(公告)号：US20130314923A1

公开(公告)日：2013-11-28

申请号：US13845232

申请日：2013-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-ryeol SEO ,  Young-kook KIM ,  Hyun-ah KIM ,  Ji-eun PARK ,  Jin-ho SON ,  Seung-hun LEE ,  Ki-seok CHOI ,  Won-yong CHOI ,  Yun-suk CHOI

IPC: F21V7/00 ,  F21V14/02

CPC classification number: F21V7/00 ,  A47F7/02 ,  A47F11/06 ,  F21V14/02

Abstract: A display apparatus is provided. The display apparatus includes a transparent display panel, a reflector disposed in the display apparatus and configured to reflect light and provide the reflected light to the transparent display panel, a light emitter configured to emit the light and project the emitted light to the reflector, and a control circuit configured to control the transparent display panel and the light emitter.

Abstract translation: 提供一种显示装置。 显示装置包括透明显示面板，布置在显示装置中并被配置为反射光并将反射光提供到透明显示面板的反射器，被配置为发射光并将发射的光投射到反射器的发光体，以及 配置为控制透明显示面板和发光体的控制电路。