公开(公告)号：US10056430B1

公开(公告)日：2018-08-21

申请号：US15793910

申请日：2017-10-25

Applicant: SanDisk Technologies LLC

Inventor： Goran Mihajlovic ,  Jordan Katine

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L29/82 ,  H01L27/24

CPC classification number: H01L27/222 ,  G11C11/005 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/24 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a fixed layer, a barrier layer, and a composite free layer. A barrier layer may be disposed between a fixed layer and a composite free layer. A composite free layer may include one or more ferromagnetic layers. A composite free layer may include one or more anisotropy inducer layers that induce an in-plane magnetic anisotropy for the composite free layer in response to a perpendicular bias voltage.