-
公开(公告)号:US20210217679A1
公开(公告)日:2021-07-15
申请号:US16740130
申请日:2020-01-10
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Tzu-Hsuan CHENG , Yong LIU , Liangbiao CHEN
IPC: H01L23/367 , H01L21/52 , H01L21/56 , H01L23/373 , H01L23/495 , H01L23/00 , H05K7/20
Abstract: A semiconductor device module may include a leadframe spacer that provides the functions of both a leadframe and a spacer, while enabling a double-sided cooling configuration. Such a leadframe spacer may include a leadframe surface that provides a die attach pad (DAP) that is shared by at least two semiconductor devices. The leadframe spacer may include at least one downset, where the semiconductor devices may be attached within a recess defined by the at least one downset. A first substrate may be connected to a first side of the leadframe. A second substrate may be connected to downset surfaces of the at least one downset, and positioned for further connection to the semiconductor devices in a double-sided assembly.
-
公开(公告)号:US20210134606A1
公开(公告)日:2021-05-06
申请号:US16674279
申请日:2019-11-05
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Yong LIU , Yusheng LIN , Liangbiao CHEN
IPC: H01L21/48 , H01L23/28 , H01L23/495 , H01L21/56
Abstract: Methods of forming semiconductor packages include providing a first insulator layer coupled with a first metallic layer. A recess is formed in the first metallic layer and a semiconductor die is mechanically coupled therein. The die is mechanically coupled with a second metallic layer and the second metallic layer is coupled with a second insulator layer. The die and layers are at least partially encapsulated to form the semiconductor package. The first and/or second metallic layers may be insulator-metal substrates, metal-insulator-metal (MIM) substrates, or may be formed of lead frames. In implementations the package does not include a spacer between the die and the first metallic layer and does not include a spacer between the die and the second metallic layer. In implementations the first insulator layer and the second insulator layer are exposed through the encapsulant or are mechanically coupled with metallic layers exposed through the encapsulant.
-