公开(公告)号：US20200105916A1

公开(公告)日：2020-04-02

申请号：US16148127

申请日：2018-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Aurore CONSTANT ,  Peter COPPENS ,  Abhishek BANERJEE

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02 ,  H01L29/10

Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.