公开(公告)号：US20250126827A1

公开(公告)日：2025-04-17

申请号：US18989749

申请日：2024-12-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Abhishek BANERJEE ,  Peter MOENS ,  Herbert DE VLEESCHOUWER ,  Peter COPPENS

IPC: H10D30/47 ,  H10D62/85 ,  H10D64/27

Abstract: High Electron Mobility Transistors (HEMTs) are described with a circular gate. with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.

公开(公告)号：US20240395922A1

公开(公告)日：2024-11-28

申请号：US18796258

申请日：2024-08-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Peter MOENS ,  Joris BAELE

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

Abstract: A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US20180308946A1

公开(公告)日：2018-10-25

申请号：US16017145

申请日：2018-06-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/45 ,  H01L29/778 ,  H01L29/205 ,  H01L23/31 ,  H01L21/285 ,  H01L23/29 ,  H01L29/20

Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

公开(公告)号：US20200144194A1

公开(公告)日：2020-05-07

申请号：US16183078

申请日：2018-11-07

Applicant: Semiconductor Components Industries, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS ,  Joris BAELE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/04 ,  H01L21/786

Abstract: An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.

公开(公告)号：US20190252509A1

公开(公告)日：2019-08-15

申请号：US15893328

申请日：2018-02-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Aurore CONSTANT

IPC: H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/66462 ,  H01L29/7786

Abstract: An electronic device can include a first layer including a III-V material, and a conductive layer including a first film that contacts the first layer, wherein the first film includes Ta—Si compound. In an embodiment, the electronic device can be a high electron mobility transistor (HEMT), the first layer can be a barrier layer between a channel layer and the source and drain electrodes. The source and drain electrodes are formed from the conductive layer. In a particular embodiment, the barrier layer can include AlGaN, and TaSi can be the first film that contacts AlGaN within the barrier layer. The Ta—Si compound allows for relatively low contact resistance to be achieved without a relatively high temperature anneal or unusual sensitivity to the thickness of the first film that contains the Ta—Si compound.

公开(公告)号：US20180102416A1

公开(公告)日：2018-04-12

申请号：US15289519

申请日：2016-10-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/45 ,  H01L29/205 ,  H01L29/20 ,  H01L23/31 ,  H01L21/285 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. Where a passivation layer is coupled between the AlGaN barrier and the first layer of the ohmic contact. Where the passivation layer surrounds the ohmic contact.

公开(公告)号：US20220262940A1

公开(公告)日：2022-08-18

申请号：US17248989

申请日：2021-02-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Peter MOENS ,  Joris BAELE

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

Abstract: A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.

公开(公告)号：US20220216332A1

公开(公告)日：2022-07-07

申请号：US17143301

申请日：2021-01-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Abhishek BANERJEE ,  Peter MOENS ,  Herbert DE VLEESCHOUWER ,  Peter COPPENS

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/20

Abstract: High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.

公开(公告)号：US20220189780A1

公开(公告)日：2022-06-16

申请号：US17123264

申请日：2020-12-16

Applicant: Semiconductor Components Industries, LLC

Inventor： Petr KOSTELNIK ,  Tomas NOVAK ,  Peter COPPENS ,  Peter MOENS ,  Abhishek BANERJEE

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H01L21/02 ,  H01L21/3215 ,  H01L29/66

Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

公开(公告)号：US20220020857A1

公开(公告)日：2022-01-20

申请号：US16948785

申请日：2020-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/45 ,  H01L29/66

Abstract: A HEMT is described in which a gate contact interlayer is included between a surface dielectric and a gate contact. Further, source, drain, and gate contacts may be self-aligned and formed using a single or same metal and metallization process. A gate may be formed in contact with, and covering a portion of, a barrier layer of the HEMT, with a gate contact formed in contact with the gate. The gate contact interlayer may be formed between a surface dielectric formed on the barrier layer and at least a portion of the gate contact.