公开(公告)号：US20220254894A1

公开(公告)日：2022-08-11

申请号：US17172243

申请日：2021-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Joris BAELE

IPC: H01L29/423 ,  H01L29/778 ,  H01L29/66

Abstract: An electronic device can include a gate structure. In an embodiment, the gate structure can include a gate electrode including a doped semiconductor material, a metal-containing member, a pair of conductive sidewall spacers. The first metal-containing member can overlie the gate electrode. The conductive sidewall spacers can overlie the gate electrode and along opposite sides of the first metal-containing member. In another embodiment, the gate structure can include a gate electrode, a first metal-containing member overlying the gate electrode, and a second metal-containing member overlying the first metal-containing member. The first metal-containing member can have a length that is greater than the length of the second metal-containing member and substantially the same length as the gate electrode.

公开(公告)号：US20220020857A1

公开(公告)日：2022-01-20

申请号：US16948785

申请日：2020-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/45 ,  H01L29/66

Abstract: A HEMT is described in which a gate contact interlayer is included between a surface dielectric and a gate contact. Further, source, drain, and gate contacts may be self-aligned and formed using a single or same metal and metallization process. A gate may be formed in contact with, and covering a portion of, a barrier layer of the HEMT, with a gate contact formed in contact with the gate. The gate contact interlayer may be formed between a surface dielectric formed on the barrier layer and at least a portion of the gate contact.

公开(公告)号：US20200105916A1

公开(公告)日：2020-04-02

申请号：US16148127

申请日：2018-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Aurore CONSTANT ,  Peter COPPENS ,  Abhishek BANERJEE

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02 ,  H01L29/10

Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.

公开(公告)号：US20210327886A1

公开(公告)日：2021-10-21

申请号：US16853613

申请日：2020-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume ROIG-GUITART ,  Aurore CONSTANT

IPC: H01L27/112 ,  H01L29/20 ,  H01L29/06 ,  H01L29/778 ,  H01L29/30 ,  H01L29/868 ,  H01L29/66 ,  H01L21/306 ,  H01L29/205

Abstract: An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses.
In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.

公开(公告)号：US20180308946A1

公开(公告)日：2018-10-25

申请号：US16017145

申请日：2018-06-25

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/45 ,  H01L29/778 ,  H01L29/205 ,  H01L23/31 ,  H01L21/285 ,  H01L23/29 ,  H01L29/20

Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.

公开(公告)号：US20200144194A1

公开(公告)日：2020-05-07

申请号：US16183078

申请日：2018-11-07

Applicant: Semiconductor Components Industries, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS ,  Joris BAELE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/04 ,  H01L21/786

Abstract: An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.

公开(公告)号：US20190252509A1

公开(公告)日：2019-08-15

申请号：US15893328

申请日：2018-02-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter COPPENS ,  Aurore CONSTANT

IPC: H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/66462 ,  H01L29/7786

Abstract: An electronic device can include a first layer including a III-V material, and a conductive layer including a first film that contacts the first layer, wherein the first film includes Ta—Si compound. In an embodiment, the electronic device can be a high electron mobility transistor (HEMT), the first layer can be a barrier layer between a channel layer and the source and drain electrodes. The source and drain electrodes are formed from the conductive layer. In a particular embodiment, the barrier layer can include AlGaN, and TaSi can be the first film that contacts AlGaN within the barrier layer. The Ta—Si compound allows for relatively low contact resistance to be achieved without a relatively high temperature anneal or unusual sensitivity to the thickness of the first film that contains the Ta—Si compound.

公开(公告)号：US20180102416A1

公开(公告)日：2018-04-12

申请号：US15289519

申请日：2016-10-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Aurore CONSTANT ,  Peter COPPENS

IPC: H01L29/45 ,  H01L29/205 ,  H01L29/20 ,  H01L23/31 ,  H01L21/285 ,  H01L29/778

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. Where a passivation layer is coupled between the AlGaN barrier and the first layer of the ohmic contact. Where the passivation layer surrounds the ohmic contact.