公开(公告)号：US09377582B2

公开(公告)日：2016-06-28

申请号：US14549718

申请日：2014-11-21

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION

发明人： Fucheng Chen ,  Herb He Huang

IPC分类号： G01N21/03 ,  H01L21/461 ,  G02B6/136 ,  H01L21/311 ,  H01L23/48 ,  H01L21/768 ,  H01L21/306 ,  H01L21/308 ,  G02B6/12

CPC分类号： G02B6/136 ,  G02B6/12002 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76804 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a substrate may include processing a substrate material member to form a first remaining portion. The first remaining portion has a first cavity. A sidewall the first cavity is oriented at a first angle with respect to at least one of a horizontal plane and a bottom side of the first remaining portion. The method may further include providing a sacrificial material member in the first cavity. The method may further include processing the sacrificial material member when processing the first remaining portion to remove the sacrificial material member and to form a second remaining portion. The second remaining portion has a second cavity. A sidewall the second cavity is oriented at a second angle with respect to at least one of the horizontal plane and a bottom side of the second remaining portion. The second angle is smaller than the first angle.

摘要翻译： 基板的制造方法可以包括处理基板材料构件以形成第一剩余部分。 第一剩余部分具有第一腔。 第一腔的侧壁相对于第一剩余部分的水平面和底侧中的至少一个被定向成第一角度。 该方法还可以包括在第一空腔中提供牺牲材料构件。 该方法还可以包括在处理第一剩余部分以去除牺牲材料构件并形成第二剩余部分时处理牺牲材料构件。 第二剩余部分具有第二腔。 第二腔的侧壁相对于第二剩余部分的水平面和底侧中的至少一个定位成第二角度。 第二角度小于第一角度。