公开(公告)号：US20230076963A1

公开(公告)日：2023-03-09

申请号：US17892189

申请日：2022-08-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG

IPC: H01L33/32 ,  H01L27/15 ,  H01L33/62 ,  H01L33/10

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; and a second conductivity type nitride semiconductor layer disposed on the upper active layer, in which the lower active layer and the upper active layer emit light having different peak wavelengths from each other.

公开(公告)号：US20230011795A1

公开(公告)日：2023-01-12

申请号：US17853068

申请日：2022-06-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Dae Hong MIN ,  Yong Hyun BAEK ,  Ji Hun KANG

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06

Abstract: A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.

公开(公告)号：US20220285579A1

公开(公告)日：2022-09-08

申请号：US17682614

申请日：2022-02-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Dae Hong MIN ,  Ji Hun KANG

IPC: H01L33/06 ,  H01L33/24

Abstract: A light emitting diode according to an exemplary embodiment of the present disclosure includes an n-type nitride semiconductor layer, a V-pit generation layer, a sub-emission layer, an active layer, and a p-type nitride semiconductor layer. The sub-emission layer is disposed on the n-type nitride semiconductor layer and having V-pits. The active layer is disposed on the sub-emission layer and having a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer. The p-type nitride semiconductor layer is disposed on the active layer. An energy band gap of the sub-emission layer is wider than that of the first well region of the active layer. The light emitting diode emits light having at least three different peak wavelengths at a single chip level.