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    HIGHLY LINEAR BUFFER
    11.
    发明申请
    HIGHLY LINEAR BUFFER 有权
    高线性缓存器

    公开(公告)号：US20150123714A1

    公开(公告)日：2015-05-07

    申请号：US14074241

    申请日：2013-11-07

    Applicant: SILICON LABORATORIES INC.

    Inventor： Ruifeng Sun ,  Mustafa H. Koroglu ,  Ramin Khoini Poorfard ,  Yu Su ,  Krishna Pentakota ,  Pio Balmelli

    IPC: H03K17/16

    CPC classification number: H03K17/16 ,  H03K2217/0063

    Abstract: Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor.

    Abstract translation: 与缓冲电路有关的技术。 在一个实施例中，电路包括配置为源极跟随器的第一晶体管和耦合到第一晶体管的栅极端子和第一晶体管的漏极端子的前馈通路。 在该实施例中，前馈路径包括被配置为将前馈路径与输入信号的DC分量去耦到第一晶体管的栅极端子的电路。 在该实施例中，电路被配置为基于输入信号来减小第一晶体管的漏 - 源电压。 在一些实施例中，前馈路径包括配置为源极跟随器的第二晶体管，并且第二晶体管的源极端子耦合到第一晶体管的漏极端子。 在各种实施例中，减小漏极 - 源极电压可以提高第一晶体管的线性。

    Power resonator with wide input voltage range for isolated power transfer
    12.
    发明授权
    Power resonator with wide input voltage range for isolated power transfer 有权

    公开(公告)号：US10833535B2

    公开(公告)日：2020-11-10

    申请号：US16141052

    申请日：2018-09-25

    Applicant: Silicon Laboratories Inc.

    Inventor： Mohammad Al-Shyoukh ,  Krishna Pentakota ,  Stefan N. Mastovich

    IPC: H02J50/12 ,  H02M3/338 ,  H02M3/335 ,  H02M3/337

    Abstract: A power transfer device includes a first power supply node, a second power supply node, and an oscillator circuit configured to convert an input DC signal across the first power supply node and the second power supply node into an AC signal on a differential pair of nodes comprising a first node and a second node in response to a control signal. The oscillator circuit includes a regulated power supply node and an active shunt regulator circuit configured to clamp a peak voltage level across the regulated power supply node and the second power supply node to a clamped voltage level. The clamped voltage level is linearly related to a first voltage level on the first power supply node.

    Electromagnetic radiation control for isolated power transfer product
    13.
    发明授权
    Electromagnetic radiation control for isolated power transfer product 有权

    公开(公告)号：US10826334B2

    公开(公告)日：2020-11-03

    申请号：US15940551

    申请日：2018-03-29

    Applicant: Silicon Laboratories Inc.

    Inventor： Krishna Pentakota ,  Huanhui Zhan

    IPC: H02M3/335 ,  H02J50/70 ,  H01L23/495 ,  H03B5/12 ,  H02J50/12

    Abstract: A power transfer device includes an oscillator circuit of a DC/AC power converter responsive to an input DC signal and an oscillator enable signal to generate an AC signal. The oscillator circuit includes a first node, a second node, and a circuit coupled between the first node and the second node. The circuit includes a cross-coupled pair of devices. The oscillator circuit further includes a variable capacitor coupled between the first node and the second node. A capacitance of the variable capacitor is based on a digital control signal. A first frequency of a pseudo-differential signal on the first node and the second node is based on the capacitance. The power transfer device further includes a control circuit configured to periodically update the digital control signal. A second frequency of periodic updates to the digital control signal is different from the first frequency.

    ELECTROMAGNETIC RADIATION CONTROL FOR ISOLATED POWER TRANSFER PRODUCT
    15.
    发明申请
    ELECTROMAGNETIC RADIATION CONTROL FOR ISOLATED POWER TRANSFER PRODUCT 审中-公开

    公开(公告)号：US20190305608A1

    公开(公告)日：2019-10-03

    申请号：US15940551

    申请日：2018-03-29

    Applicant: Silicon Laboratories Inc.

    Inventor： Krishna Pentakota ,  Huanhui Zhan

    IPC: H02J50/70 ,  H01L23/495 ,  H02M3/335 ,  H02J50/12 ,  H03B5/12

    Abstract: A power transfer device includes an oscillator circuit of a DC/AC power converter responsive to an input DC signal and an oscillator enable signal to generate an AC signal. The oscillator circuit includes a first node, a second node, and a circuit coupled between the first node and the second node. The circuit includes a cross-coupled pair of devices. The oscillator circuit further includes a variable capacitor coupled between the first node and the second node. A capacitance of the variable capacitor is based on a digital control signal. A first frequency of a pseudo-differential signal on the first node and the second node is based on the capacitance. The power transfer device further includes a control circuit configured to periodically update the digital control signal. A second frequency of periodic updates to the digital control signal is different from the first frequency.

    Highly linear buffer
    17.
    发明授权
    Highly linear buffer 有权
    高度线性缓冲

    公开(公告)号：US09231579B2

    公开(公告)日：2016-01-05

    申请号：US14074241

    申请日：2013-11-07

    Applicant: SILICON LABORATORIES INC.

    Inventor： Ruifeng Sun ,  Mustafa H. Koroglu ,  Ramin Khoini Poorfard ,  Yu Su ,  Krishna Pentakota ,  Pio Balmelli

    IPC: H03B1/00 ,  H03K3/00 ,  H03K17/16

    CPC classification number: H03K17/16 ,  H03K2217/0063

    Abstract: Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor.

    Abstract translation: 与缓冲电路有关的技术。 在一个实施例中，电路包括配置为源极跟随器的第一晶体管和耦合到第一晶体管的栅极端子和第一晶体管的漏极端子的前馈通路。 在该实施例中，前馈路径包括被配置为将前馈路径与输入信号的DC分量去耦到第一晶体管的栅极端子的电路。 在该实施例中，电路被配置为基于输入信号来减小第一晶体管的漏 - 源电压。 在一些实施例中，前馈路径包括配置为源极跟随器的第二晶体管，并且第二晶体管的源极端子耦合到第一晶体管的漏极端子。 在各种实施例中，减小漏极 - 源极电压可以提高第一晶体管的线性。

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