公开(公告)号：US20230170213A1

公开(公告)日：2023-06-01

申请号：US18072680

申请日：2022-11-30

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  Keiji FUKUTOMI ,  Drew W. CARDWELL ,  David N. ITALIANO

IPC: H01L21/02

CPC classification number: H01L21/02389 ,  H01L21/02433 ,  H01L21/02595

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20220406953A1

公开(公告)日：2022-12-22

申请号：US17893048

申请日：2022-08-22

Applicant: SLT Technologies, Inc.

Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

IPC: H01L31/109 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18

Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.