公开(公告)号：US20170287972A1

公开(公告)日：2017-10-05

申请号：US15630032

申请日：2017-06-22

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US10651222B2

公开(公告)日：2020-05-12

申请号：US16084602

申请日：2017-01-18

Applicant: SONY CORPORATION

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/107 ,  H01L27/30

Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

公开(公告)号：US20190067361A1

公开(公告)日：2019-02-28

申请号：US16168522

申请日：2018-10-23

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L27/146 ,  H04N5/3745

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US10075659B2

公开(公告)日：2018-09-11

申请号：US15119499

申请日：2015-02-20

Applicant: SONY CORPORATION

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/357 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/378

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

公开(公告)号：US09865643B2

公开(公告)日：2018-01-09

申请号：US15630032

申请日：2017-06-22

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US20170110503A1

公开(公告)日：2017-04-20

申请号：US15395538

申请日：2016-12-30

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US11411034B2

公开(公告)日：2022-08-09

申请号：US16853315

申请日：2020-04-20

Applicant: SONY CORPORATION

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/30 ,  H04N5/369

Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

公开(公告)号：US10134797B2

公开(公告)日：2018-11-20

申请号：US15812370

申请日：2017-11-14

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L33/00 ,  H01L27/146 ,  H04N5/3745

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

公开(公告)号：US09773835B2

公开(公告)日：2017-09-26

申请号：US15395538

申请日：2016-12-30

Applicant: Sony Corporation

Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

IPC: H01L33/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14641 ,  H04N5/37457

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.