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    Solid-state imaging apparatus, imaging system, and distance measurement method
    1.
    发明授权
    Solid-state imaging apparatus, imaging system, and distance measurement method 有权

    公开(公告)号：US11128828B2

    公开(公告)日：2021-09-21

    申请号：US16715653

    申请日：2019-12-16

    Applicant: SONY CORPORATION

    Inventor： Takuya Sano ,  Toshifumi Wakano

    IPC: H01L27/10 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745 ,  G01S17/36 ,  G01S17/86 ,  H04N9/04 ,  G01S17/894 ,  G01C3/08

    Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.

    Imaging device and electronic apparatus
    2.
    发明授权
    Imaging device and electronic apparatus 有权

    公开(公告)号：US11044428B2

    公开(公告)日：2021-06-22

    申请号：US16122753

    申请日：2018-09-05

    Applicant: SONY CORPORATION

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

    IPC: H04N5/357 ,  H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

    Solid state imaging device and electronic apparatus
    4.
    发明授权
    Solid state imaging device and electronic apparatus 有权

    公开(公告)号：US10121807B2

    公开(公告)日：2018-11-06

    申请号：US15626567

    申请日：2017-06-19

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano ,  Fumihiko Koga

    IPC: H04N5/335 ,  H01L27/146 ,  H01L27/148 ,  H04N5/374 ,  H04N5/378 ,  H04N5/357

    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    Solid state imaging device and electronic apparatus
    5.
    发明授权
    Solid state imaging device and electronic apparatus 有权
    固态成像装置和电子装置

    公开(公告)号：US09590007B2

    公开(公告)日：2017-03-07

    申请号：US15079168

    申请日：2016-03-24

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano ,  Fumihiko Koga

    IPC: H01L27/148

    CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    Abstract translation: 本发明提供一种固态成像装置，其特征在于，包括：像素分配单元以阵列形状配置的像素部分，并且由多个光电转换部分共用除了转移晶体管的另一个像素晶体管组; 传送布线，其连接到像素共享单元的传输晶体管的传输栅电极并且被设置为沿着从顶平面看的在水平方向上延伸并且在垂直方向上平行; 以及平行布线，其被设置为与像素共享单元中的必要的传输布线相邻并且被设置为与顶面平行地与传输布线平行，其中用于抑制电位变化的电压 的传输栅电极被提供给并行布线。

    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    6.
    发明申请
    SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
    固态成像装置和电子装置

    公开(公告)号：US20170040363A1

    公开(公告)日：2017-02-09

    申请号：US15296498

    申请日：2016-10-18

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano ,  Fumihiko Koga

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/357

    CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    Abstract translation: 本发明提供一种固态成像装置，其特征在于，包括：像素分配单元以阵列形状配置的像素部分，并且由多个光电转换部分共用除了转移晶体管的另一个像素晶体管组; 传送布线，其连接到像素共享单元的传输晶体管的传输栅电极并且被设置为沿着从顶平面看的在水平方向上延伸并且在垂直方向上平行; 以及平行布线，其被设置为与像素共享单元中的必要的传输布线相邻并且从顶平面观察并且布置成与传输布线平行，其中用于抑制电位变化的电压 的传输栅电极被提供给并行布线。

    Solid state imaging device and electronic apparatus
    9.
    发明授权
    Solid state imaging device and electronic apparatus 有权

    公开(公告)号：US09344662B2

    公开(公告)日：2016-05-17

    申请号：US14934826

    申请日：2015-11-06

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano ,  Fumihiko Koga

    IPC: H04N5/232 ,  H04N5/378

    CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14656 ,  H01L27/14812 ,  H01L27/14887 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

    Solid-state image sensor and electronic device
    10.
    发明授权
    Solid-state image sensor and electronic device 有权
    固态图像传感器和电子设备

    公开(公告)号：US09224778B2

    公开(公告)日：2015-12-29

    申请号：US14346616

    申请日：2012-09-27

    Applicant: Sony Corporation

    Inventor： Toshifumi Wakano

    IPC: H01L31/00 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14607 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37457

    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.

    Abstract translation: 提供了一种固态图像传感器，其包括其中布置有多个像素的半导体衬底，以及堆叠在半导体衬底上并以这样的方式形成的布线层，使得具有多个布线的多个导体层被掩埋 在绝缘膜中。 在布线层中，连接到像素的布线由两个导体层形成。

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