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    Imaging device and electronic apparatus
    1.
    发明授权
    Imaging device and electronic apparatus 有权

    公开(公告)号：US11044428B2

    公开(公告)日：2021-06-22

    申请号：US16122753

    申请日：2018-09-05

    Applicant: SONY CORPORATION

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

    IPC: H04N5/357 ,  H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

    Solid-state imaging device and electronic apparatus
    2.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US11411034B2

    公开(公告)日：2022-08-09

    申请号：US16853315

    申请日：2020-04-20

    Applicant: SONY CORPORATION

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

    IPC: H01L27/146 ,  H01L31/107 ,  H01L27/30 ,  H04N5/369

    Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

    Solid-state image sensor, imaging device, and electronic equipment
    3.
    发明授权
    Solid-state image sensor, imaging device, and electronic equipment 有权

    公开(公告)号：US10134797B2

    公开(公告)日：2018-11-20

    申请号：US15812370

    申请日：2017-11-14

    Applicant: Sony Corporation

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

    IPC: H01L33/00 ,  H01L27/146 ,  H04N5/3745

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

    Solid-state image sensor, imaging device, and electronic equipment
    9.
    发明授权
    Solid-state image sensor, imaging device, and electronic equipment 有权

    公开(公告)号：US10741605B2

    公开(公告)日：2020-08-11

    申请号：US16168522

    申请日：2018-10-23

    Applicant: Sony Corporation

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

    IPC: H01L27/146 ,  H04N5/3745

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

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