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    Imaging device and electronic apparatus
    1.
    发明授权
    Imaging device and electronic apparatus 有权

    公开(公告)号：US11044428B2

    公开(公告)日：2021-06-22

    申请号：US16122753

    申请日：2018-09-05

    Applicant: SONY CORPORATION

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Otake

    IPC: H04N5/357 ,  H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

    Solid-state image sensor, imaging device, and electronic equipment
    4.
    发明授权
    Solid-state image sensor, imaging device, and electronic equipment 有权

    公开(公告)号：US10741605B2

    公开(公告)日：2020-08-11

    申请号：US16168522

    申请日：2018-10-23

    Applicant: Sony Corporation

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

    IPC: H01L27/146 ,  H04N5/3745

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency.In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

    Imaging apparatus and electronic device
    5.
    发明授权
    Imaging apparatus and electronic device 有权

    公开(公告)号：US10546898B2

    公开(公告)日：2020-01-28

    申请号：US16062556

    申请日：2016-12-09

    Applicant: SONY CORPORATION

    Inventor： Yusuke Otake ,  Toshifumi Wakano

    IPC: H01L27/00 ,  H01L27/30 ,  H01L27/28 ,  H01L51/44

    Abstract: This technology relates to an imaging apparatus and an electronic device structured to perform pupil correction appropriately. There are provided a photoelectric conversion film configured to absorb light of a predetermined color component to generate signal charges, a first lower electrode configured to be formed under the photoelectric conversion film, a second lower electrode configured to be connected with the first lower electrode, a via configured to connect the first lower electrode with the second lower electrode, and a photodiode configured to be formed under the second lower electrode and to generate signal charges reflecting the amount of incident light. A first distance between the center of the photodiode and the center of the via at the center of the angle of view is different from a second distance therebetween at an edge of the angle of view. The present technology can be applied to imaging apparatuses.

    Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    6.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权

    公开(公告)号：US09947703B2

    公开(公告)日：2018-04-17

    申请号：US15113861

    申请日：2015-02-05

    Applicant: SONY CORPORATION

    Inventor： Kenji Azami ,  Yusuke Otake ,  Yuko Ohgishi ,  Toshifumi Wakano ,  Atsushi Toda

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/353

    CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14656 ,  H01L27/14687 ,  H04N5/353 ,  H04N5/374 ,  H04N5/3745

    Abstract: The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus.The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit. Then, the photoelectric conversion film is formed by stacking a layer formed with a material having a great light blocking effect on the back surface of the semiconductor substrate. The present technology can be applied to back-illuminated CMOS image sensors in global shutter mode.

    Solid-state image sensor, imaging device, and electronic equipment
    8.
    发明授权
    Solid-state image sensor, imaging device, and electronic equipment 有权

    公开(公告)号：US10128300B2

    公开(公告)日：2018-11-13

    申请号：US15812179

    申请日：2017-11-14

    Applicant: Sony Corporation

    Inventor： Nanako Kato ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yusuke Otake

    IPC: H01L33/00 ,  H01L27/146 ,  H04N5/3745

    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

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