公开(公告)号：US20210054280A1

公开(公告)日：2021-02-25

申请号：US17087637

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20180179442A1

公开(公告)日：2018-06-28

申请号：US15844712

申请日：2017-12-18

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L21/0214 ,  H01L21/02458 ,  H01L21/31111 ,  H01L27/11556 ,  H01L29/66825

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20160017224A1

公开(公告)日：2016-01-21

申请号：US14797050

申请日：2015-07-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311

CPC classification number: C09K13/06 ,  H01L21/31111 ,  H01L27/11556 ,  H01L29/66825

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract translation: 本发明涉及用于蚀刻的组合物，该组合物的制造方法以及使用该组合物制造半导体的方法。 组合物可以包括第一无机酸，通过第二无机酸和硅烷化合物之间的反应产生的硅烷无机酸盐和溶剂中的至少一种。 第二无机酸可以是选自硫酸，发烟硫酸，硝酸，磷酸及其组合中的至少一种。

公开(公告)号：US20230136538A1

公开(公告)日：2023-05-04

申请号：US18088765

申请日：2022-12-26

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054286A1

公开(公告)日：2021-02-25

申请号：US17093662

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054285A1

公开(公告)日：2021-02-25

申请号：US17093658

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200263087A1

公开(公告)日：2020-08-20

申请号：US15781471

申请日：2016-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200024517A1

公开(公告)日：2020-01-23

申请号：US16579866

申请日：2019-09-24

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20230141924A1

公开(公告)日：2023-05-11

申请号：US18088769

申请日：2022-12-26

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

CPC classification number: C09K13/06 ,  H01L21/30604 ,  H01L21/31111 ,  C09K13/04

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054283A1

公开(公告)日：2021-02-25

申请号：US17093654

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.