公开(公告)号：US20230136538A1

公开(公告)日：2023-05-04

申请号：US18088765

申请日：2022-12-26

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054286A1

公开(公告)日：2021-02-25

申请号：US17093662

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054285A1

公开(公告)日：2021-02-25

申请号：US17093658

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200263087A1

公开(公告)日：2020-08-20

申请号：US15781471

申请日：2016-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200024517A1

公开(公告)日：2020-01-23

申请号：US16579866

申请日：2019-09-24

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210130691A1

公开(公告)日：2021-05-06

申请号：US17087628

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054279A1

公开(公告)日：2021-02-25

申请号：US17087635

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054277A1

公开(公告)日：2021-02-25

申请号：US17087631

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054276A1

公开(公告)日：2021-02-25

申请号：US17087626

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20190189631A1

公开(公告)日：2019-06-20

申请号：US16217049

申请日：2018-12-12

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: H01L27/11556 ,  H01L21/311 ,  H01L21/02 ,  C23F1/16 ,  C09K13/04

CPC classification number: H01L27/11556 ,  C09K13/04 ,  C23F1/16 ,  H01L21/0217 ,  H01L21/31116

Abstract: The present invention provides a composition for etching a silicon nitride film and a manufacturing method of a semiconductor device using the same, wherein the composition for etching a silicon nitride film comprises phosphoric acid, metaphosphoric acid, an ammonium salt-based compound, and water.