公开(公告)号：US10601388B2

公开(公告)日：2020-03-24

申请号：US15286283

申请日：2016-10-05

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Scott Haymore ,  Constanine Fragos

IPC: H02H3/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  C23C14/14 ,  H03H9/02 ,  H03H3/02

Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.