公开(公告)号：US09803272B2

公开(公告)日：2017-10-31

申请号：US14532098

申请日：2014-11-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Yun Zhou ,  Rhonda Hyndman ,  Stephen R Burgess

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/10 ,  C23C14/34 ,  C01B33/12

CPC classification number: C23C14/0036 ,  C01B33/12 ,  C23C14/10 ,  C23C14/3485 ,  C23C14/35

Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.

公开(公告)号：US11521840B2

公开(公告)日：2022-12-06

申请号：US15899634

申请日：2018-02-20

Applicant: SPTS Technologies Limited

Inventor： Anthony Wilby ,  Steve Burgess ,  Ian Moncrieff ,  Clive Widdicks ,  Scott Haymore ,  Rhonda Hyndman

IPC: C23C14/35 ,  H01J37/34 ,  B81B3/00 ,  C23C14/50 ,  H01J37/32 ,  H01L21/02 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US10900114B2

公开(公告)日：2021-01-26

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US20210005439A1

公开(公告)日：2021-01-07

申请号：US16918202

申请日：2020-07-01

Applicant: SPTS Technologies Limited

Inventor： Rhonda Hyndman ,  Steve Burgess

IPC: H01J37/34 ,  C23C14/50 ,  C23C14/35

Abstract: A magnetron sputtering apparatus for depositing material onto a substrate, comprises: a chamber comprising a substrate support and a target; a plasma production device configured to produce a plasma within the chamber suitable for sputtering material from the target onto the substrate; and a thermally conductive grid comprising a plurality of cells. Each cell comprises an aperture and the ratio of the height of the cells to the width of the apertures is less than 1.0. The grid is disposed between the substrate support and the target and is substantially parallel to the target. The upper surface of the substrate support is positioned at a distance of 75 mm or less from the lower surface of the target.

公开(公告)号：US10812035B2

公开(公告)日：2020-10-20

申请号：US16129346

申请日：2018-09-12

Applicant: SPTS Technologies Limited

Inventor： Rhonda Hyndman ,  Steve Burgess

IPC: H03H3/10 ,  H03H9/25 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H03H9/02 ,  H03H9/145 ,  H03H9/64 ,  H01L41/053 ,  H01L41/23 ,  C23C14/10 ,  C23C14/54 ,  H03H3/08 ,  C23C14/00 ,  H03H3/04

Abstract: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.

公开(公告)号：US11875980B2

公开(公告)日：2024-01-16

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  C23C14/10 ,  H01J37/32

CPC classification number: H01J37/3458 ,  C23C14/0617 ,  C23C14/10 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3408

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US11008651B2

公开(公告)日：2021-05-18

申请号：US15478283

申请日：2017-04-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Scott Haymore ,  Amit Rastogi ,  Rhonda Hyndman ,  Steve Burgess ,  Ian Moncrieff ,  Chris Kendal

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

公开(公告)号：US20210123130A1

公开(公告)日：2021-04-29

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/10 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US11913109B2

公开(公告)日：2024-02-27

申请号：US16541635

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： Tony Wilby ,  Steve Burgess ,  Adrian Thomas ,  Rhonda Hyndman ,  Scott Haymore ,  Clive Widdicks ,  Ian Moncrieff

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/50 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3467 ,  C23C14/542

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US11718908B2

公开(公告)日：2023-08-08

申请号：US17241237

申请日：2021-04-27

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Scott Haymore ,  Amit Rastogi ,  Rhonda Hyndman ,  Steve Burgess ,  Ian Moncrieff

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/06 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/505 ,  C23C14/345 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3467 ,  C23C14/0617 ,  C23C14/0641 ,  H01J37/3426

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.