公开(公告)号：US10900114B2

公开(公告)日：2021-01-26

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US11718908B2

公开(公告)日：2023-08-08

申请号：US17241237

申请日：2021-04-27

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Scott Haymore ,  Amit Rastogi ,  Rhonda Hyndman ,  Steve Burgess ,  Ian Moncrieff

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/06 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/505 ,  C23C14/345 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3467 ,  C23C14/0617 ,  C23C14/0641 ,  H01J37/3426

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

公开(公告)号：US10601388B2

公开(公告)日：2020-03-24

申请号：US15286283

申请日：2016-10-05

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Scott Haymore ,  Constanine Fragos

IPC: H02H3/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  C23C14/14 ,  H03H9/02 ,  H03H3/02

Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.

公开(公告)号：US12207556B2

公开(公告)日：2025-01-21

申请号：US16865227

申请日：2020-05-01

Applicant: SPTS Technologies Limited

Inventor： Adrian Thomas ,  Steve Burgess ,  Amit Rastogi ,  Tony Wilby ,  Scott Haymore

IPC: H03H3/08 ,  C01B21/06 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H10N30/045 ,  H10N30/076 ,  H10N30/082

Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.

公开(公告)号：US11875980B2

公开(公告)日：2024-01-16

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  C23C14/10 ,  H01J37/32

CPC classification number: H01J37/3458 ,  C23C14/0617 ,  C23C14/10 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3408

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

公开(公告)号：US11008651B2

公开(公告)日：2021-05-18

申请号：US15478283

申请日：2017-04-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Scott Haymore ,  Amit Rastogi ,  Rhonda Hyndman ,  Steve Burgess ,  Ian Moncrieff ,  Chris Kendal

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

公开(公告)号：US20210123130A1

公开(公告)日：2021-04-29

申请号：US17139445

申请日：2020-12-31

Applicant: SPTS Technologies Limited

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Eduardo Paulo Lima ,  Clive L Widdicks ,  Paul Rich ,  Scott Haymore ,  Daniel Cook

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C14/10 ,  H01J37/34 ,  H01J37/32

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.