公开(公告)号：US20140070254A1

公开(公告)日：2014-03-13

申请号：US14025753

申请日：2013-09-12

申请人： Stanley Electric Co., Ltd.

发明人： Takanobu AKAGI

IPC分类号： H01L33/58

CPC分类号： H01L33/405 ,  H01L33/0095 ,  H01L33/02 ,  H01L33/10 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0016 ,  H01L2933/0058

摘要： A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane.

摘要翻译： 半导体发光器件包括包括p型半导体层，有源半导体层和n型半导体层的半导体层叠体; 包括形成在p型半导体层上方的第一电极结构的对置电极结构和形成在n型半导体层上方的第二电极结构; 以及亮度等级的制造结构，其包括p型半导体层和n型半导体层中的至少一种的表面层，并且产生从光输出面的一个边缘到相对边缘逐渐变化的亮度等级。