公开(公告)号：US20220199846A1

公开(公告)日：2022-06-23

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US12154967B2

公开(公告)日：2024-11-26

申请号：US16697051

申请日：2019-11-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A method for manufacturing an ohmic contact for a HEMT device, comprising the steps of: forming a photoresist layer, on a semiconductor body comprising a heterostructure; forming, in the photoresist layer, an opening, through which a surface region of the semiconductor body is exposed at said heterostructure; etching the surface region of the semiconductor body using the photoresist layer as etching mask to form a trench in the heterostructure; depositing one or more metal layers in said trench and on the photoresist layer; and carrying out a process of lift-off of the photoresist layer.

公开(公告)号：US11799025B2

公开(公告)日：2023-10-24

申请号：US16706539

申请日：2019-12-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/778 ,  H01L21/285 ,  H01L29/06 ,  H01L29/47 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7786 ,  H01L21/28581 ,  H01L29/0649 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.

公开(公告)号：US20190097074A1

公开(公告)日：2019-03-28

申请号：US16167796

申请日：2018-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0376

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09099305B2

公开(公告)日：2015-08-04

申请号：US14265034

申请日：2014-04-29

Applicant: STMicroelectronics S.r.l.

Inventor： Noemi Graziana Sparta' ,  Cristina Tringali ,  Stella Loverso ,  Sebastiano Ravesi ,  Corrado Accardi ,  Filippo Giannazzo

IPC: H01L21/20 ,  H01L21/44 ,  H01L23/58 ,  H01L21/02 ,  H01L29/16 ,  H01L21/762

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Abstract translation: 本公开涉及一种用于将石墨烯层与具有至少一个亲水表面的基底结合的方法，所述方法包括以下步骤：提供具有至少一个亲水表面的基底，在亲水表面上沉积选自 由丙酮，乳酸乙酯，异丙醇，甲基乙基酮及其混合物构成的基团，并在溶剂层上沉积石墨烯层。 此外，还涉及一种包括获得的石墨烯/基底结构的电子器件。