公开(公告)号：US11001061B2

公开(公告)日：2021-05-11

申请号：US14981701

申请日：2015-12-28

Applicant: STMicroelectronics S.r.l.

Inventor： Dino Faralli ,  Laura Maria Castoldi ,  Paolo Ferrari ,  Marta Carminati

IPC: B41J2/16 ,  B41J2/14 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  C23C16/34

Abstract: Methods for manufacturing a microfluidic delivery device comprising a semiconductor structure, such as silicon, are provided. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses semiconductor material, such as silicon, to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

公开(公告)号：US09469109B2

公开(公告)日：2016-10-18

申请号：US14531830

申请日：2014-11-03

Applicant: STMicroelectronics S.r.l.

Inventor： Dino Faralli ,  Laura Maria Castoldi ,  Paolo Ferrari ,  Marta Carminati

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1643

Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

Abstract translation: 本文公开的实施方案涉及具有主要半导体结构（例如硅）的微流体递送装置。 特别地，用于输送流体的结构可以由也称为多晶硅的多晶硅或外延硅形成。 主要使用硅基材料以形成与分配的流体接触的结构的微流体递送装置导致与广泛流体和应用相容的装置。

公开(公告)号：US09184138B2

公开(公告)日：2015-11-10

申请号：US13719103

申请日：2012-12-18

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Angelo Antonio Merassi ,  Marco Ferrera ,  Marco Mantovani ,  Paolo Ferrari ,  Benedetto Vigna

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/16 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3107 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor integrated device is provided with: a die having a body of semiconductor material with a front surface, and an active area arranged at the front surface; and a package having a support element carrying the die at a back surface of the body, and a coating material covering the die. The body includes a mechanical decoupling region, which mechanically decouples the active area from mechanical stresses induced by the package; the mechanical decoupling region is a trench arrangement within the body, which releases the active area from an external frame of the body, designed to absorb the mechanical stresses induced by the package.

Abstract translation: 半导体集成器件具有：具有前表面的半导体材料体的主体和配置在前表面的有源区域; 以及具有在主体的背面承载模具的支撑元件和覆盖模具的包覆材料的包装。 机体包括机械解耦区域，机械解耦有源区域与由包装引起的机械应力; 机械解耦区域是主体内的沟槽布置，其从主体的外框架释放活动区域，设计成吸收由包装引起的机械应力。