ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAVING HIGHER SENSITIVITY IN RESPONSE TO DYNAMIC BIASING

    公开(公告)号:US20180372679A1

    公开(公告)日:2018-12-27

    申请号:US15631078

    申请日:2017-06-23

    CPC classification number: G01N27/4148

    Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.

    Electro-optical phase modulator
    17.
    发明授权

    公开(公告)号:US11822164B2

    公开(公告)日:2023-11-21

    申请号:US17009468

    申请日:2020-09-01

    Inventor: Stephane Monfray

    Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

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