公开(公告)号：US10741740B2

公开(公告)日：2020-08-11

申请号：US16047505

申请日：2018-07-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Emmanuel Dubois ,  Jean-Francois Robillard ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L35/32 ,  H01L27/16

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

公开(公告)号：US10075102B2

公开(公告)日：2018-09-11

申请号：US15139151

申请日：2016-04-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arthur Arnaud ,  Jihane Boughaleb ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L41/113 ,  H02N2/18 ,  H02N3/00 ,  F03G7/06

CPC classification number: H02N2/18 ,  F03G7/06 ,  H01L41/1134 ,  H02N3/00

Abstract: A system for converting thermal energy into electrical power includes a temperature-sensitive element held in a frame by its two ends between a heat source and a cold source producing a thermal gradient. A piezoelectric element is positioned between the frame and at least one end of the temperature-sensitive element. The temperature-sensitive element is configured to deform cyclically between two states under the action of the thermal gradient. With each cyclic deformation, a stress is applied to the piezoelectric element via the one end.

公开(公告)号：US09793396B2

公开(公告)日：2017-10-17

申请号：US15169495

申请日：2016-05-31

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Qing Liu ,  Thomas Skotnicki

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L21/28 ,  H01L29/08 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/7838 ,  H01L21/28114 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/42356 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/7834

Abstract: An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.

公开(公告)号：US20150255705A1

公开(公告)日：2015-09-10

申请号：US14634454

申请日：2015-02-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Emilie Trioux ,  Pascal Ancey ,  Stephane Monfray ,  Thomas Skotnicki ,  Skandar Basrour ,  Paul Muralt

IPC: H01L41/27 ,  C23C4/10 ,  C23C4/12 ,  H01L41/08 ,  F03G7/06

CPC classification number: H01L41/27 ,  B32B15/01 ,  C22F1/00 ,  C23C4/10 ,  C23C4/134 ,  C23C10/12 ,  F03G7/06 ,  H01L41/0805 ,  H01L41/0815 ,  H01L41/33 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49124

Abstract: A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Abstract translation: 制造具有不同曲率的双稳态条带的方法，每条条带包括多个材料层，其中至少一个特定层部分通过等离子体喷涂方法在对每个条带不同的条件下进行沉积。

公开(公告)号：US20130292952A1

公开(公告)日：2013-11-07

申请号：US13874163

申请日：2013-04-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thomas Skotnicki ,  Onoriu Puscasu ,  Stéphan Monfray

IPC: F03G7/06

CPC classification number: F03G7/06 ,  H02N1/08

Abstract: A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes.

Abstract translation: 一种用于将热能转换成与热源组合使用的电能的装置，包括：可变电容的电容器，包括由电绝缘材料隔开的两个电极，这些电极中的一个可变形并与元件相关联 形成双金属条，所述双金属条包括具有不同热膨胀系数的至少两层材料，当所述双金属条被送到所述热源的热时，所述双金属条可自由变形; 第二电容器，其具有连接到所述可变电容器的电容器的第一电极的第一电极; 电连接在可变电容器的电容器的第二电极和第二电容器的第二电极之间的收集电路，所述收获电路能够传导在所述第二电极之间流动的电流。

公开(公告)号：US10103310B2

公开(公告)日：2018-10-16

申请号：US14851536

申请日：2015-09-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Emmanuel Dubois ,  Jean-Francois Robillard ,  Stephane Monfray ,  Thomas Skotnicki

IPC: H01L35/32 ,  H01L27/16

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

公开(公告)号：US09735707B2

公开(公告)日：2017-08-15

申请号：US14356717

申请日：2012-11-08

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Stéphane Monfray ,  Guillaume Savelli ,  Thomas Skotnicki ,  Philippe Coronel ,  Frédéric Gaillard

IPC: H02N10/00 ,  H02N2/18

CPC classification number: H02N2/18 ,  Y10T29/42

Abstract: System for converting thermal energy into electrical energy (S1) intended to be arranged between a hot source (SC) and a cold source (SF), comprising means for converting thermal energy into mechanical energy (6) and a piezoelectric material, with the means for converting thermal energy into mechanical energy (6) comprising groups (G1, G2) of at least three bimetallic strips (9, 11, 13) linked mechanically together by their longitudinal ends and suspended above a substrate (12), each bimetallic strip (9, 11, 13) comprising two stable states wherein it has in each of the states a curvature, with two directly adjacent bimetallic strips (9, 11, 13) having for a given temperature opposite curvatures, with the switching from one stable state of the bimetallic strips (9, 11, 13) to the other causing the deformation of a piezoelectric material.

公开(公告)号：US09698707B2

公开(公告)日：2017-07-04

申请号：US14455110

申请日：2014-08-08

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Stephane Monfray ,  Arthur Arnaud ,  Thomas Skotnicki ,  Onoriu Puscasu ,  Sebastien Boisseau

IPC: H02K11/00 ,  H02N10/00 ,  F03G7/06 ,  H02N1/08 ,  H02N2/18

CPC classification number: H02N10/00 ,  F03G7/06 ,  H02N1/08 ,  H02N2/18 ,  Y10T29/4913

Abstract: A device for converting thermal power into electric power includes many conversion cells arranged inside and on top of a substrate. Each conversion cell includes a curved bimetal strip and first and second diodes coupled to the bimetal strip. The diodes are arranged in a semiconductor region of the substrate.

公开(公告)号：US20170169696A1

公开(公告)日：2017-06-15

申请号：US15139500

申请日：2016-04-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Stephane Monfray ,  Christophe Maitre ,  Thomas Skotnicki

IPC: G08B21/18 ,  G01K1/02 ,  H01L41/113

CPC classification number: G08B21/182 ,  G01D21/00 ,  G01K1/024 ,  G01K5/72 ,  G01P15/02 ,  H01L41/113 ,  H02N2/18

Abstract: A detector of an event includes an electrical energy generator formed by a flexible piezoelectric element with a weight fastened to the flexible piezoelectric element that is biased with the weight in a position with the piezoelectric element flexed. In response to detection of the event, a trigger releases the weight so as to cause a vibration of the piezoelectric element. This vibration is converted by the flexible piezoelectric element into electrical energy. An electronic system is power by the electrical energy and is operable to generate an electrical signal indicative of the detected event.

公开(公告)号：US09666670B2

公开(公告)日：2017-05-30

申请号：US15169473

申请日：2016-05-31

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Qing Liu ,  Thomas Skotnicki

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L27/12 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28

CPC classification number: H01L29/7838 ,  H01L21/28114 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/42356 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/7834

Abstract: An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.