公开(公告)号：US11996784B2

公开(公告)日：2024-05-28

申请号：US17532717

申请日：2021-11-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Romain Launois

IPC: H02M7/06 ,  H02M1/32 ,  H02M1/36

CPC classification number: H02M7/062 ,  H02M1/322 ,  H02M1/36

Abstract: A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.

公开(公告)号：US10916939B2

公开(公告)日：2021-02-09

申请号：US16149614

申请日：2018-10-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics Asia Pacific Pte Ltd

Inventor： Romain Pichon ,  Yannick Hague ,  Sean Choi

IPC: H02H9/04 ,  H02H9/00 ,  H01C7/108 ,  H01C7/12

Abstract: Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil™ avalanche diode.

公开(公告)号：US09997623B2

公开(公告)日：2018-06-12

申请号：US14957803

申请日：2015-12-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague

IPC: H01L29/66 ,  H01L29/747 ,  H01L29/732 ,  H01L25/07 ,  H01L25/065 ,  H01L27/02 ,  H01L27/082

CPC classification number: H01L29/747 ,  H01L25/0652 ,  H01L25/072 ,  H01L27/0296 ,  H01L27/082 ,  H01L27/0823 ,  H01L29/1004 ,  H01L29/732 ,  H01L2224/06181 ,  H01L2224/48137

Abstract: A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.