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公开(公告)号：US11451157B2
公开(公告)日：2022-09-20
申请号：US17071193
申请日：2020-10-15
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Romain Launois
Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.
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公开(公告)号：US20160329417A1
公开(公告)日：2016-11-10
申请号：US14957803
申请日：2015-12-03
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague
IPC: H01L29/747 , H01L27/082 , H01L25/065 , H01L27/02
CPC classification number: H01L29/747 , H01L25/0652 , H01L25/072 , H01L27/0296 , H01L27/082 , H01L27/0823 , H01L29/1004 , H01L29/732 , H01L2224/06181 , H01L2224/48137
Abstract: A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.
Abstract translation: 开关包括三个部件。 每个部件包括具有交替导电类型的三个半导体区域的堆叠以及三个半导体区域中的第一个具有与第一半导体区域相反的类型的控制区域。 第一和第二部件的第一半导体区域具有相同的导电类型，并且第一和第三部件的第一半导体区域具有相反的导电类型。 第一部件的第一半导体区域连接到第二和第三部件的控制区域。 第二和第三部件的第一半导体区域连接到第一开关端子，第一，第二和第三部件的第三半导体区域连接到第二开关端子，并且第一部件的控制区域连接到 第三开关端子。
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公开(公告)号：US20160344384A1
公开(公告)日：2016-11-24
申请号：US14957984
申请日：2015-12-03
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Samuel Menard
IPC: H03K17/735
CPC classification number: H03K17/735 , H01L29/7408 , H01L29/7412 , H01L29/747 , H03K17/06 , H03K17/16 , H03K17/725 , H03K17/74 , H03K2017/066
Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.
Abstract translation: 双向功率开关包括在开关的第一和第二导通端之间反向并联连接的第一和第二晶闸管。 第一晶闸管是阳极闸晶闸管，第二晶闸管是阴极闸极晶闸管。 第一和第二晶闸管的栅极通过相应的偶极子电路耦合到开关的相同控制端子。 偶极电路中的至少一个由至少一个二极管或至少一个电阻器形成。
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公开(公告)号：US11811395B2
公开(公告)日：2023-11-07
申请号：US17466604
申请日：2021-09-03
Applicant: STMicroelectronics (Tours) SAS
Inventor： Romain Pichon , Yannick Hague
CPC classification number: H03K17/136 , H03K17/76 , H03K17/305
Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.
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公开(公告)号：US11705827B2
公开(公告)日：2023-07-18
申请号：US17888686
申请日：2022-08-16
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Romain Launois
CPC classification number: H02M7/162 , H02M1/0085 , H02M7/062
Abstract: A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.
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Patent Agency Ranking
公开(公告)号：US09680468B2
公开(公告)日：2017-06-13
申请号：US14957984
申请日：2015-12-03
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Samuel Menard
IPC: H03K17/72 , H03K17/735 , H01L29/74 , H01L29/747 , H03K17/725 , H03K17/06 , H03K17/16 , H03K17/74
CPC classification number: H03K17/735 , H01L29/7408 , H01L29/7412 , H01L29/747 , H03K17/06 , H03K17/16 , H03K17/725 , H03K17/74 , H03K2017/066
Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.
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公开(公告)号：US08901601B2
公开(公告)日：2014-12-02
申请号：US13774554
申请日：2013-02-22
Inventor： Samuel Menard , Yannick Hague , Gaël Gautier
IPC: H01L29/74 , H01L31/111 , H01L29/06 , H01L29/747 , H01L29/66
CPC classification number: H01L29/747 , H01L24/32 , H01L29/0638 , H01L29/0649 , H01L29/0661 , H01L29/66386 , H01L2224/32014
Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.
Abstract translation: 一种垂直功率分量，包括第一导电类型的硅衬底，并且在支撑单个电极的下表面侧，在所述下表面侧具有第二导电类型的阱，所述第二导电类型的阱在所述下表面侧具有周边 至少部分地填充有钝化物的沟槽，以及阱和沟槽之间的多孔硅绝缘环。
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公开(公告)号：US20130228822A1
公开(公告)日：2013-09-05
申请号：US13774554
申请日：2013-02-22
Inventor： Samuel Menard , Yannick Hague , Gaël Gautier
IPC: H01L29/747
CPC classification number: H01L29/747 , H01L24/32 , H01L29/0638 , H01L29/0649 , H01L29/0661 , H01L29/66386 , H01L2224/32014
Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.
Abstract translation: 一种垂直功率分量，包括第一导电类型的硅衬底，并且在支撑单个电极的下表面侧，在所述下表面侧具有第二导电类型的阱，所述第二导电类型的阱在所述下表面侧具有周边 至少部分地填充有钝化物的沟槽，以及阱和沟槽之间的多孔硅绝缘环。
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公开(公告)号：US12184196B2
公开(公告)日：2024-12-31
申请号：US17903214
申请日：2022-09-06
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Romain Launois
Abstract: A converter includes first and second transistors coupled between first and second nodes, and first and second thyristors coupled between the first and second nodes. The converter is controlled for operation to: in first periods, turn the first transistor and second thyristor on and turn the second transistor and the first thyristor off, and in second periods, turn the first transistor and the second thyristor off and turn the second transistor and the first thyristor on. Further control of converter operation includes, for a third period following each first period, turning the first and second transistors off, turning the second thyristor off, and injecting a current into the gate of the first thyristor. Additional control of converter operation includes, for a fourth period following each second period, turning the first and second transistors off, turning the first thyristor off, and injecting a current into the gate of the second thyristor.
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公开(公告)号：US12101022B2
公开(公告)日：2024-09-24
申请号：US17550534
申请日：2021-12-14
Applicant: STMicroelectronics (Tours) SAS
Inventor： Yannick Hague , Benoit Renard , Romain Launois
Abstract: A voltage converter includes a circuit formed by a parallel association, connected between first and second nodes, of a first branch and a second branch. The first branch includes a first controlled rectifying element having a first impedance. The second branch includes a resistor associated in series with a second rectifying element having a second impedance substantially equal to the first impedance. The second rectifying element may, for example, be a triac having its gate coupled to receive a signal from an intermediate node in the series association of the second branch. Alternatively, the second rectifying element may be a thyristor having its gate coupled to receive a signal at the anode of the thyristor.
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